P210 Todos los transistores

 0.1. Size:687K  st
 stp210n75f6.pdf

STP210N75F6 N-channel 75 V, 3 m , 120 A TO-220 STripFET VI DeepGATE Power MOSFET Features Order code VDSS RDS(on) max ID STP210N75F6 75 V

 0.2. Size:609K  st
 stp210nf02.pdf

STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 - 120A D PAK/I PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE VDSS RDS(on) ID STB210NF02/-1 20 V

 0.3. Size:97K  sanyo
 fp210.pdf

Ordering number EN4537 FP210 NPN Epitaxial Planar Silicon Transistor Driver Applications Features Package Dimensions Composite type with 2 transistors (PNP) contained unit mm in one package, facilitating high-density mounting. 2097A The FP210 is formed with 2 chips being equivalent [FP209] to the 2SB1123, placed in one package. Electrical Connection 1 Base (PNP TR) 2, 7 Co

 0.4. Size:400K  diodes
 dmp210dufb4.pdf

DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID P-Channel MOSFET V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance 5 @ VGS = -4.5V -200mA Very Low Gate Threshold Voltage VGS(TH) -170mA 7 @ VGS = -2.5V Low Input Capacitance -20V 10 @ VGS = -1.8V -140mA Fast Switching Speed -50mA 15 @ VGS = -1.5V

 0.5. Size:41K  diodes
 zvp2106astob zvp2106astz zvp2106as zvp2106astoa.pdf

P-CHANNEL ENHANCEMENT ZVP2106A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5 VGS= -10V D -9V G S -8V E-Line -7V TO92 Compatible -6V ABSOLUTE MAXIMUM RATINGS. -5V PARAMETER SYMBOL VALUE UNIT -4V -3.5V Drain-Source Voltage VDS -60 V -8 -10 Continuous Drain Current at Tamb=25 C ID -280 mA Pulsed Drain Current IDM -4 A Gate Source V

 0.6. Size:53K  diodes
 zvp2106a.pdf

P-CHANNEL ENHANCEMENT ZVP2106A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5 VGS= -10V D -9V G S -8V E-Line -7V TO92 Compatible -6V ABSOLUTE MAXIMUM RATINGS. -5V PARAMETER SYMBOL VALUE UNIT -4V -3.5V Drain-Source Voltage VDS -60 V -8 -10 Continuous Drain Current at Tamb=25 C ID -280 mA Pulsed Drain Current IDM -4 A Gate Source V

 0.7. Size:440K  diodes
 dmp210dudj.pdf

DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case SOT-963 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 o 5.0 @ -4.5V o 7.0 @ -2.5V Moisture Sensitivity Level 1 per J-STD-020 o 10 @ -1.8V Terminal Connections See Diagra

 0.8. Size:193K  diodes
 dmp2100u.pdf

DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25 C Low Input Capacitance 38m @ VGS = -10V -4.3A Fast Switching Speed -20V 43m @ VGS = -4.5V SOT23 -4.0A Low Input/Output Leakage 75m @ VGS = -2.5V -2.8A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compl

 0.9. Size:77K  diodes
 zvp2106g.pdf

SOT223 P-CHANNEL ENHANCEMENT 6G ZVP2106G MODE VERTICAL DMOS FET ISSUE 3 MARCH 96 T D V I VD D VGS= S -10V T I D T I V -9V T T V D -8V G -7V ABSOLUTE MAXIMUM RATINGS. -6V T V IT -5V -4V D i V I VD V -3.5V i D i T ID -8 -10 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).

 0.10. Size:422K  diodes
 dmp2100ucb9.pdf

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25 C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 80m to Minimize On-State Losses -20V 80m 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching Vgs(th) = -0.7V typ. for a Low Turn-On Potential CSP with Footpr

 0.11. Size:15K  diodes
 zvp2106b.pdf

ZVP2106B MECHANICAL DATA P CHANNEL ENHANCEMENT Dimensions in mm (inches) MODE DMOS FET BVDSS - 60V 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) ID(cont) 0.76A 8.51 (0.335) RDS(on) 0.5 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) 7.75 (0.305) min. 8.51 (0.335) dia. FEATURES 5.08 (0.200) typ. FAST SWITCHING SPEEDS 2.54 2 (0.100) 1 3 NO SECONDARY

 0.12. Size:178K  diodes
 dmp2104v.pdf

DMP2104V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case SOT-563 Very Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Terminal

 0.13. Size:317K  diodes
 dmp2104lp.pdf

DMP2104LP P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case DFN1411-3 Very Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Te

 0.14. Size:61K  diodes
 zvp2106gta zvp2106gtc.pdf

SOT223 P-CHANNEL ENHANCEMENT 6G ZVP2106G MODE VERTICAL DMOS FET ISSUE 3 MARCH 96 T D V I VD D VGS= S -10V T I D T I V -9V T T V D -8V G -7V ABSOLUTE MAXIMUM RATINGS. -6V T V IT -5V -4V D i V I VD V -3.5V i D i T ID -8 -10 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).

 0.15. Size:626K  supertex
 vp2106.pdf

Supertex inc. VP2106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power

 0.16. Size:721K  supertex
 tp2104.pdf

Supertex inc. TP2104 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description High input impedance and high gain This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well- Low power drive requirement proven, silicon-gate manufacturing process. This combination Ease of paralleling produces a dev

 0.17. Size:713K  russia
 p210a p210sh.pdf

 0.18. Size:119K  samhop
 sp2102.pdf

Green Product SP2102 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 100V 2.0A 216 @ VGS=10V Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

 0.19. Size:111K  samhop
 sp2107.pdf

Green Product SP2107 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 0.8 @ VGS=10V Suface Mount Package. 100V 1.2A 0.93 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 3 D2 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6 A

 0.20. Size:111K  samhop
 sp2103.pdf

Green Product SP2103 a S mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 220 @ VGS=10V Suface Mount Package. 100V 2.2A 350 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless

 0.21. Size:110K  samhop
 sp2106.pdf

Green Product SP2106 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 2.0 @ VGS=10V Suface Mount Package. 100V 1A 2.4 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 3 D2 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6 ABSO

 0.22. Size:106K  samhop
 sp2108.pdf

Green Product SP2108 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 811 @ VGS=10V Suface Mount Package. 100V 1.2A 932 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 D2 3 S 2 PIN1 D1 7 2 G 1 8 1 D1 S 1 PDFN 5x6

 0.23. Size:324K  unikc
 p2103hvg.pdf

P2103HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 21m @VGS = 10V 8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 8 ID Continuous Drain Current TA = 70 C 6 A IDM 40 Pulsed Drain Current1 IA

 0.24. Size:796K  unikc
 p2103nvg.pdf

P2103NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N- 21m @VGS = 10V 30 8A Channel P- 34m @VGS = 10V -6A -30 Channel SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) N- P- PARAMETERS/TEST CONDITIONS SYMBOL UNITS Channel Channe VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage 20 20 V TA = 25 C 8 -6

 0.25. Size:1042K  cn hunteck
 hgb210n20s hgk210n20s hgp210n20s.pdf

, P-1 HGB210N20S HGK210N20S HGP210N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching 16 RDS(on),typ mW Enhanced Body diode dv/dt capability 70 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS TO-263 TO-220 Hard Switching and Hig

 0.26. Size:951K  cn scilicon
 sfp210n200c3 sfb205n200c3.pdf

SFP210N200C3,SFB205N200C3 N-MOSFET 200V, 16m , 75A Features Product Summary High Speed Power Smooth Switching V 200V DS Maximum 175 C junction temperature R 16m DS(on) Enhanced Body diode dv/dt capability I 75A D Enhanced Avalanche Ruggedness 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manag