P302 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3024B/DThe RF LineUHF Linear Power TransistorTP3024BThe TP3024B is a balanced transistor designed specifically for use in cellularradio systems. This device permits the design of a Class AB pushpull, highgain, broadband amplifier having a high degree of linearity without the need forcomplicated biasing circuitry.

TP3020A PCB24

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3021/DThe RF LineUHF Power TransistorTP3021The TP3021 is designed for 24 V common emitter base station amplifiers.Operating in the 820960 MHz bandwidth, it has been specifically designed foruse in analog and digital (GSM) systems as a medium power output device. Specified 24 Volts, 960 MHz CharacteristicsOut

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3022B/DThe RF LineUHF Power TransistorTP3022BThe TP3022B is designed for commonemitter operation in the 900 MHzmobile radio band. Use of gold metallization and silicon diffused ballastresistors results in a medium power output/driver transistor with stateoftheart ruggedness and reliability. Specifie

STP3020LN - CHANNEL 30V - 0.019 - 40A - TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP3020L 30 V

Ordering number:EN4726FP302TR:NPN Epitaxial Planar Silicon TransistorSBD:Schottky Barrier DiodeDC-DC Converter ApplicationsFeatures Package Dimensions Composite type with NPN transistor and Schottokyunit:mmbarrier diode facilitating high-density mounting.2099A The FP302 is composed of chips equivalent to the[FP302]2SC4520 and SB05-05CP, which are placed in onepac

ATP302Ordering number : ENA1654ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP302ApplicationsFeatures ON-resistance RDS(on)1=10m (typ.) Input capacitance Ciss=5400pF (typ.) 4.5V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrai

BUP 302IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 302 1000V 12A TO-218 AB Q67078-A4205-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1000 VCollector-gate voltage VCGRRGE = 20 k 1000Gate-

BYP 302FRED Diode Fast recovery epitaxial diode Soft recovery characteristicsType VRRM IFRMS trr Package Ordering CodeBYP 302 1200V 40A 130ns TO-218 AD C67047-A2252-A2Maximum RatingsParameter Symbol Values UnitMean forward current IFAV ATC = 90 C, D = 0.5 25RMS forward current IFRMS 40Surge forward current, sine halfwave, aperiodic IFSMTj = 100 C, f = 50 Hz 115

DMP3028LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test In Production V(BR)DSS RDS(on) TC = +25C Low On-Resistance Fast Switching Speed 25m @ VGS = -10V -27A -30V Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 38m @ VGS = -4.5V -22A Halogen and Antimony Free. Green Devi

DMP3028LFDE 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25C Low On-Resistance 25m @ VGS = -10V -6.8A -30V Fast Switching Speed -5.0A 38m @ VGS = -4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti

DMP3020LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 14m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 25m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D

DMP3028LSD Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage 20 V VGSS Steady TA = +25C -6 ID A State -4.7 TA = +70C Continuous Drain Current (Note 5) VGS = 10V TA = +25C -7.4 t

Ordering number : ENA1654AATP302P-Channel Power MOSFEThttp://onsemi.com 60V, 70A, 13m , ATPAKFeatures ON-resistance RDS(on)1=10m (typ.) Input capacitance Ciss=5400pF (typ.) 4.5V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-t

p-n n-. 2302P max, 300U max,B 20U max,B 20U max,B 10I max, 24Tmax,C 125U ,B 1...3.5I,A 10 U,B 10S,/ 5...12 U, 7I , 3...2411, 2012, 8

DMP3025LK3-13www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop View

isc P-Channel MOSFET Transistor DMP3028LK3FEATURESDrain Current I = -27A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu