P306 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3061/DThe RF LineUHF Power TransistorTP3061The TP3061 is designed for 960 MHz mobile base stations in both analog anddigital applications. It incorporates high value emitter ballast resistors, goldmetallizations and offers a high degree of reliability and ruggedness. Includingdouble input and output matching network

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP3069/DThe RF LineRF Power TransistorTP3069The TP3069 is designed for cellular radio base station amplifiers up to 960MHz. It incorporates high value emitter ballast resistors, gold metallizations andoffers a high degree of reliability and ruggedness. The TP3069 also featuresinput and output matching networks and hig

BUP 306DIGBT With Antiparallel DiodePreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diodePin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 306D 1200V 23A TO-218 AB Q67040-A4222-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-ga

DMP3065LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 42m @ VGS = -10V -5.1A -30V ESD Protected Gate 65m @ VGS = -4.5V -4.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

DMP3068L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance V(BR)DS ID max Low Gate Threshold Voltage RDS(ON) max Package TA = +25C S Low Input Capacitance Fast Switching Speed -3.9A 72m @ VGS = -10V Low Input/Output Leakage -30V SOT-23 85m @ VGS = -4.5V -3.6A Totally Lead-Free & Fully RoHS Compliant (

CEP3060/CEB3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25

http://www.ncepower.com NCEP3065QUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065QU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

Pb Free Producthttp://www.ncepower.com NCEP3060EQNCE N-Channel Super Trench Power MOSFET Description The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.com NCEP3065BQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065BQU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc