P306 Todos los transistores

 0.1. Size:118K  motorola
 tp3061re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TP3061/D The RF Line UHF Power Transistor TP3061 The TP3061 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching network

 0.2. Size:144K  motorola
 tp3069re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TP3069/D The RF Line RF Power Transistor TP3069 The TP3069 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3069 also features input and output matching networks and hig

 0.3. Size:221K  siemens
 bup306d.pdf

BUP 306D IGBT With Antiparallel Diode Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 306D 1200V 23A TO-218 AB Q67040-A4222-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-ga

 0.4. Size:354K  diodes
 dmp3065lvt.pdf

DMP3065LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance Fast Switching Speed 42m @ VGS = -10V -5.1A -30V ESD Protected Gate 65m @ VGS = -4.5V -4.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 0.5. Size:342K  diodes
 dmp3068l.pdf

DMP3068L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance V(BR)DS ID max Low Gate Threshold Voltage RDS(ON) max Package TA = +25 C S Low Input Capacitance Fast Switching Speed -3.9A 72m @ VGS = -10V Low Input/Output Leakage -30V SOT-23 85m @ VGS = -4.5V -3.6A Totally Lead-Free & Fully RoHS Compliant (

 0.6. Size:1044K  russia
 kp306 2p306.pdf

 0.7. Size:941K  russia
 p302 p303a p304 p306a.pdf

 0.8. Size:408K  cet
 cep3060 ceb3060.pdf

CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25

 0.9. Size:506K  ncepower
 ncep3065qu.pdf

http //www.ncepower.com NCEP3065QU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065QU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi

 0.10. Size:332K  ncepower
 ncep3060eq.pdf

Pb Free Product http //www.ncepower.com NCEP3060EQ NCE N-Channel Super Trench Power MOSFET Description The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.11. Size:510K  ncepower
 ncep3065bqu.pdf

http //www.ncepower.com NCEP3065BQU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065BQU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc

 0.12. Size:1268K  allpower
 ap3065sd.pdf