PH2222 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH2222

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO92

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PH2222 datasheet

 0.1. Size:51K  philips
 ph2222a 4.pdf pdf_icon

PH2222

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector Switc

 9.1. Size:102K  macom
 ph2226-110m.pdf pdf_icon

PH2222

PH2226-110M Radar Pulsed Power Transistor M/A-COM Products 110W, 2.2-2.6GHz, 100 s Pulse, 10% Duty Released, 22 Feb 08 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Inter

 9.2. Size:102K  macom
 ph2226-50m.pdf pdf_icon

PH2222

PH2226-50M Radar Pulsed Power Transistor M/A-COM Products 50W, 2.2-2.6GHz, 100 s Pulse, 10% Duty Released, 20 Jun 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Interna

Otros transistores... PE5025, PE5029, PE5030B, PE5031, PET2002, PET3706, PET6001, PET8002, 9014, PH2222A, PH2369, PH2369A, PH2907, PH2907A, PH5415, PH5416, PL1026