PMD1600K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMD1600K
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 180 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10000
Paquete / Cubierta: TO3
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PMD1600K Datasheet (PDF)
pmd1601k.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 60V(Min) Complement to type PMD1701K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VA
pmd1602k.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD1702K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VA
pmd1603k.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1603K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) Complement to type PMD1703K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: DMBTA44 | 2SC765 | 2SB443A | 2N5862 | DTC123JEB | NKT108 | KRC663U
History: DMBTA44 | 2SC765 | 2SB443A | 2N5862 | DTC123JEB | NKT108 | KRC663U



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