PMD1702K
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMD1702K
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 180
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 20
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 700
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar PMD1702K
PMD1702K
Datasheet (PDF)
..1. Size:200K inchange semiconductor
pmd1702k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1702K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD1602K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V
8.1. Size:199K inchange semiconductor
pmd1703k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1703K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) Complement to type PMD1603K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
8.2. Size:200K inchange semiconductor
pmd1701k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1701K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) Complement to type PMD1601K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V
9.1. Size:199K inchange semiconductor
pmd17k60.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min) Complement to type PMD16K60 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
9.2. Size:199K inchange semiconductor
pmd17k100.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type PMD16K100 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAME
9.3. Size:199K inchange semiconductor
pmd17k80.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) Complement to type PMD16K80 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.