PMD1702K Todos los transistores

 

PMD1702K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMD1702K
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 180 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 700
   Paquete / Cubierta: TO3
 

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PMD1702K Datasheet (PDF)

 ..1. Size:200K  inchange semiconductor
 pmd1702k.pdf pdf_icon

PMD1702K

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1702K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD1602K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V

 8.1. Size:199K  inchange semiconductor
 pmd1703k.pdf pdf_icon

PMD1702K

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1703K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) Complement to type PMD1603K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER

 8.2. Size:200K  inchange semiconductor
 pmd1701k.pdf pdf_icon

PMD1702K

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1701K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) Complement to type PMD1601K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V

 9.1. Size:199K  inchange semiconductor
 pmd17k60.pdf pdf_icon

PMD1702K

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min) Complement to type PMD16K60 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER

MOSTRAR MÁS

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: RT3NBBM | 2SA486 | KT885A | DMA50201 | 2N447 | HUN2241 | 2N1182

 

 
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