PMD17K100 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PMD17K100
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 220 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 800
Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar PMD17K100

PMD17K100 Datasheet (PDF)

..1. Size:199K inchange semiconductor
pmd17k100.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type PMD16K100 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAME

8.1. Size:199K inchange semiconductor
pmd17k60.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min) Complement to type PMD16K60 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER

8.2. Size:199K inchange semiconductor
pmd17k80.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) Complement to type PMD16K80 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER

9.1. Size:200K inchange semiconductor
pmd1702k.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1702K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD1602K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V

9.2. Size:199K inchange semiconductor
pmd1703k.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1703K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) Complement to type PMD1603K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER

9.3. Size:200K inchange semiconductor
pmd1701k.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1701K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) Complement to type PMD1601K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N3997SM | MA393A | 2N926 | LBC558 | 2N3816A | BSS53 | 2SA357

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050