PN2369R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PN2369R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 500 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO92

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PN2369R datasheet

 8.1. Size:50K  philips
 pn2369 pn2369a 3.pdf pdf_icon

PN2369R

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2369; PN2369A NPN switching transistors 1999 Apr 14 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 15 V). 1 collector 2 base APPLICATIONS 3 e

 8.2. Size:30K  fairchild semi
 pn2369.pdf pdf_icon

PN2369R

PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Vol

 8.3. Size:121K  fairchild semi
 mmbt2369 pn2369.pdf pdf_icon

PN2369R

February 2008 MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark 1J 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emit

 8.4. Size:749K  fairchild semi
 pn2369a mmbt2369a.pdf pdf_icon

PN2369R

PN2369A MMBT2369A C E C TO-92 B SOT-23 B E Mark 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Vo

MOSTRAR MÁS

Otros transistores... PN2221A, PN2221AR, PN2221R, PN2222, PN2222A, PN2222AR, PN2222R, PN2369, 8050, PN2484, PN2484R, PN2711, PN2712, PN2713, PN2714, PN2715, PN2716