PN2369R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PN2369; PN2369ANPN switching transistors1999 Apr 14Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistors PN2369; PN2369AFEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 collector2 baseAPPLICATIONS3 e

PN2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Vol

February 2008MMBT2369 / PN2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.MMBT2369 PN2369CESOT-23BTO-921Mark: 1J1. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emit

PN2369A MMBT2369ACEC TO-92BSOT-23BEMark: 1SNPN Switching TransistorThis device is designed for high speed saturated switching at collectorcurrents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Vo

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPN2369NPN SILICON HIGH SPEED SWITHCHING TRANSISTORSTO-92Plastic PackageCBELOW POWER FOR HIGH SPEED SWITCHING APPLICATIONSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 15 VVCBOCollector Base Voltage 40 V