PN3644 Todos los transistores

 ..1. Size:295K  fairchild semi
 pn3644.pdf

Discrete POWER & Signal Technologies PN3644 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 45 V CEO

 9.1. Size:27K  fairchild semi
 pn3643.pdf

PN3643 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V I

 9.2. Size:295K  fairchild semi
 pn3645.pdf

Discrete POWER & Signal Technologies PN3645 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CEO

 9.3. Size:27K  fairchild semi
 pn3642.pdf

PN3642 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V I

 9.4. Size:28K  fairchild semi
 pn3646.pdf

PN3646 NPN Switching Transistor Sourced from process 22. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continued 300 mA TSTG Operating and Storage Junction Temperature Range -

 9.5. Size:688K  fairchild semi
 pn3640 mmbt3640.pdf

PN3640 MMBT3640 C E TO-92 C B B SOT-23 E Mark 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V VCBO Collector-Base Voltage

 9.6. Size:67K  central
 2n3641 2n3642 2n3643 pn3641 pn3642 pn3643.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.7. Size:73K  central
 2n3646 2n5772 pn3646.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824