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PN3646 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PN3646
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 350 MHz
   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar PN3646

 

PN3646 Datasheet (PDF)

 ..1. Size:28K  fairchild semi
pn3646.pdf

PN3646
PN3646

PN3646NPN Switching Transistor Sourced from process 22.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continued 300 mATSTG Operating and Storage Junction Temperature Range -

 ..2. Size:73K  central
2n3646 2n5772 pn3646.pdf

PN3646

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.1. Size:27K  fairchild semi
pn3643.pdf

PN3646
PN3646

PN3643NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 5.0 VI

 9.2. Size:295K  fairchild semi
pn3645.pdf

PN3646
PN3646

Discrete POWER & SignalTechnologiesPN3645C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV Collector-Emitter Voltage 60 VCEO

 9.3. Size:295K  fairchild semi
pn3644.pdf

PN3646
PN3646

Discrete POWER & SignalTechnologiesPN3644C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV Collector-Emitter Voltage 45 VCEO

 9.4. Size:27K  fairchild semi
pn3642.pdf

PN3646
PN3646

PN3642NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 5.0 VI

 9.5. Size:688K  fairchild semi
pn3640 mmbt3640.pdf

PN3646
PN3646

PN3640 MMBT3640CETO-92CB BSOT-23EMark: 2JPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 12 VVCBO Collector-Base Voltage

 9.6. Size:67K  central
2n3641 2n3642 2n3643 pn3641 pn3642 pn3643.pdf

PN3646

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1152 | 2SA1468

 

 
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History: 2SB1152 | 2SA1468

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