PT802 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PT802

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.6 W

Tensión colector-base (Vcb): 45 V

Corriente del colector DC máxima (Ic): 0.5 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 24 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO5

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PT802 datasheet

 0.1. Size:70K  apt
apt8024b2fll.pdf pdf_icon

PT802

APT8024B2FLL APT8024LFLL 800V 31A 0.240W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

 0.2. Size:69K  apt
apt8020b2ll.pdf pdf_icon

PT802

APT8020B2LL APT8020LLL 800V 38A 0.200W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

 0.3. Size:39K  apt
apt8024b2vfr.pdf pdf_icon

PT802

APT8024B2VFR APT8024LVFR 800V 33A 0.240W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical Sp

 0.4. Size:71K  apt
apt8020b2fll.pdf pdf_icon

PT802

APT8020B2FLL APT8020LFLL 800V 38A 0.200W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona

Otros transistores... PT706, PT706-1, PT706A, PT706A-1, PT709, PT709-1, PT720, PT801, 2SB817, PT822, PT851, PT852, PT853, PT896, PT901, PT901-1, PT902