R8259 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R8259

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 60

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R8259 datasheet

 0.1. Size:363K  international rectifier
 irlu8259pbf irlr8259pbf.pdf pdf_icon

R8259

PD - 97360 IRLR8259PbF IRLU8259PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial Use D Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully

 0.2. Size:361K  international rectifier
 irlr8259pbf irlu8259pbf.pdf pdf_icon

R8259

PD - 97360 IRLR8259PbF IRLU8259PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial Use D Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully

 0.3. Size:242K  inchange semiconductor
 irlr8259.pdf pdf_icon

R8259

isc N-Channel MOSFET Transistor IRLR8259, IIRLR8259 FEATURES Static drain-source on-resistance RDS(on) 8.7m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

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