SC158B Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SC158B
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 75 MHz
Ganancia de corriente contínua (hFE): 240
Encapsulados: X13
Búsqueda de reemplazo de SC158B
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SC158B datasheet
2sc1580.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1580 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1586.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1586 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1585.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1585 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
Otros transistores... SC149, SC149B, SC149C, SC157, SC157A, SC157VI, SC158, SC158A, 2SC945, SC158VI, SC159, SC159A, SC159B, SC257, SC257A, SC257VI, SC258
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