SC259B Todos los transistores

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SC259B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SC259B

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 75 MHz

Ganancia de corriente contínua (hfe): 240

Empaquetado / Estuche: X13

Búsqueda de reemplazo de transistor bipolar SC259B

 

SC259B Datasheet (PDF)

5.1. 2sc2594.pdf Size:83K _panasonic

SC259B
SC259B

5.2. 2sc2590.pdf Size:80K _panasonic

SC259B
SC259B

Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 0.1 3.20.2 ? 3.160.1 Features Excellent collector current IC characteristics of forward current transfer ratio hFE High transition frequency fT TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings T

5.3. 2sc2591.pdf Size:62K _no

SC259B

5.4. 2sc2590.pdf Size:181K _jmnic

SC259B
SC259B

JMnic Product Specification Silicon NPN Power Transistors 2SC2590 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT ·Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS ·For low-frequency power amplification PIN

5.5. 2sc2591 2sc2592.pdf Size:114K _jmnic

SC259B
SC259B

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1111/1112 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220

5.6. 2sc2594.pdf Size:113K _inchange_semiconductor

SC259B
SC259B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2594 DESCRIPTION · ·With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base ABSOLUTE MAXIMUM RATINGS (TC=25?) SYMBOL PARAMETER CONDITIONS VALUE UN

5.7. 2sc2590.pdf Size:147K _inchange_semiconductor

SC259B
SC259B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA1110 Ў¤ Excellent current IC characteristics of forward current transfer ratio hFE vs. collector Ў¤ High transition frequency fT Ў¤ Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS Ў¤ For low-frequency power amplificat

5.8. 2sc2591 2sc2592.pdf Size:166K _inchange_semiconductor

SC259B
SC259B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA1111/1112 Ў¤ Good linearity of hFE Ў¤ High VCEO APPLICATIONS Ў¤ For audio frequency, high power amplifiers application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and s

Otros transistores... SC257A , SC257VI , SC258 , SC258A , SC258B , SC258VI , SC259 , SC259A , 9015 , SC4010 , SC4244 , SD109 , SD1893 , SD1893F , SD2222A , SD2222AF , SD2857 .

 


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