SE6023 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SE6023

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.22 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 15 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO106

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SE6023 datasheet

 9.1. Size:466K  cn sino-ic
 se6020b.pdf pdf_icon

SE6023

SE6020B N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =14m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations Se

 9.2. Size:368K  cn sino-ic
 se60210ga.pdf pdf_icon

SE6023

Dec 2014 SE60210GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 60V charge. RDS(ON) = 2.2m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations

 9.3. Size:466K  cn sino-ic
 se6020db.pdf pdf_icon

SE6023

SE6020DB N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =24m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations S

Otros transistores... SE5-0854, SE5-567, SE6001, SE6002, SE6010, SE6020, SE6021, SE6022, 2SC2240, SE6062, SE6063, SE6562, SE6563, SE7005, SE7055, SE7056, SE8001