2N1137B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N1137B
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.5 MHz
   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar 2N1137B

2N1137B Datasheet (PDF)

9.1. Size:10K semelab
2n1132dcsm.pdf

2N1132DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 50V CEO6.22 0.13 A = 1.27 0.13I = 0.6A C(0.0

9.2. Size:41K semelab
2n1132csm.pdf

2N1132CSM MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR FEATURES 1.02 0.10 0.51 0.10 (0.04 0.004)(0.02 0.004) 0.31(0.012)rad. SILICON PNP TRANSISTOR. HIGH SPEED SWITCHING 3 SCREENING OPTIONS AVAILABLE 2 1 1.91 0.10APPLICATIONS (0.075 0.004)1.40 0.31rad.(0.055)(0.012) 3.05

9.3. Size:128K microsemi
2n1132l.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 DEVICES LEVELS 2N1131 2N1132 JAN 2N1131L 2N1132L JANTX JANTXV ABSOL

9.4. Size:128K microsemi
2n1131l.pdf