2N5152SM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5152SM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 560 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO252
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2N5152SM Datasheet (PDF)
2n5152smd.pdf

2N5152SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n5152smd05.pdf

2N5152SMD052N5154SMD05MECHANICAL DATANPN BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5152SMD05 and the 2N5154SMD05 aresilicon expitaxial planar NPN transistors in aCeramic S
2n5151 2n5152 2n5153 2n5154.pdf

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2n5152a.pdf

2N5152ADimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
Otros transistores... 2N514B , 2N515 , 2N5150 , 2N5151 , 2N5151A , 2N5151S , 2N5152 , 2N5152S , KTB688 , 2N5153 , 2N5153-220M , 2N5153S , 2N5153SM , 2N5154 , 2N5154-220M , 2N5154A , 2N5154S .
History: BCV27 | CSC3198Y | GT328V | GT329G | 2SC122 | 2SC1349F | PEMD17
History: BCV27 | CSC3198Y | GT328V | GT329G | 2SC122 | 2SC1349F | PEMD17



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