SK3026 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power F-MOS FETs2SK3026 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance No secondary breakdown4.60.2 Low-voltage drive9.90.3 2.90.2 High electrostatic breakdown voltage 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

isc N-Channel MOSFET Transistor 2SK3026FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =18m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Power F-MOS FETs2SK3027 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance No secondary breakdown4.60.2 Low-voltage drive9.90.3 2.90.2 High electrostatic breakdown voltage 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

Power F-MOS FETs2SK3028 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance No secondary breakdown15.50.5 3.00.3 Low-voltage drive 3.20.1 High electrostatic breakdown voltage5 5 Applications Contactless relay Diving circuit for a solenoid55 Driving circuit

Power F-MOS FETs2SK3029 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.15.30.1 No secondary breakdown4.350.10.50.1 Low-voltage drive High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.0

Power F-MOS FETs2SK3023 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.05

2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: G = 28dB (typ.) ps Recommend operation voltage: 5~15 V Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit

Ordering number:ENN6230N-Channel Silicon MOSFET2SK3021DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm 4V drive.2083B[2SK3021]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK3021]6.5 2.35.0 0.540.50.851 2 30.61.21 : Gate0 to 0

Ordering number:ENN6229N-Channel Silicon MOSFET2SK3020DC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2083B[2SK3020]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK3020]6.5 2.35.0 0.540.50.851 2 30.61.21 : Gate0 to 0

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3022Silicon N-channel power MOSFET Features Package Avalanche energy capability guaranteed Code High-speed switchingU-G2 Low ON resistance Ron Pin Name No secondary breakdown1: Gate Low-voltage drive2: Drain High electrostatic energy capability3: Source

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOS FETs2SK3025Silicon N-channel power MOS FET Features Package Code Avalanche energy capability guaranteed High-speed switchingU-DL Low ON resistance Ron Pin Name No secondary breakdown1: Gate Low-voltage drive2: Drain High electrostatic energy capability3: Source

High Frequency FETs 3SK2853SK302(Tentative), 3SK306(Tentative)Silicon N-Channel MOS+0.23SK302 2.8 0.3 Unit : mmFor UHF amplification +0.20.65 0.15 1.5 0.3 0.65 0.150.5R Features4 1 Though low voltage operation, performance is equivalent to the con-ventional product.3 2 Downsizing of sets by mini or S-mini type package, and automaticinsertion by taping/magaz

Power F-MOS FETs2SK3024Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.0520.50.1

SMD Type MOSFETN-Channel MOSFET2SK3024-ZTO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2 0.50 +0.8-0.2 Features-0.7 VDS (V) = 60V ID = 20 A (VGS = 10V)0.127 RDS(ON) 50m (VGS = 10V)0.80+0.1 max-0.1D RDS(ON) 70m (VGS = 4V)G Switching power supply1 Gate2.3 0.60+ 0.1- 0.1+0.154.60 -0.152 DrainS3 Source

isc N-Channel MOSFET Transistor 2SK3027FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =12m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3022FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 135m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3028FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3029FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =0.42m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3023FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3024FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =50m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d