SK3194 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SK3194
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO66
Búsqueda de reemplazo de transistor bipolar SK3194
SK3194 Datasheet (PDF)
2sk3193.pdf
Power MOSFETs2SK3193Silicon N-channel power MOSFETUnit: mmFor switching15.00.3 5.00.211.00.2 (3.2) Features 3.20.1 Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown 2.00.12.00.21.10.1 0.60.2 Absolute Maximum Ratings TC = 25CParameter Symbol Rating Unit5.450.3Drain-s
3sk319.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3192.pdf
Power MOSFETs2SK3192Silicon N-channel power MOSFETUnit: mm15.00.3 5.00.2 Features11.00.2 (3.2) Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron 3.20.1 No secondary breakdown Applications2.00.12.00.2 PDP Switching mode regulator1.10.1 0.60.2 Absolute Maximum Ratings TC = 25C5.45
2sk3199.pdf
2SK3199External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V I = 100A, V = 0V(BR) DSS D GS V 500 VDSSI 100 nA V = 30VGSS GS V 30 VGSSI 100 A V = 500V, V = 0VDSS DS GS I 5ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS D I 2
2sk3199.pdf
isc N-Channel MOSFET Transistor 2SK3199FEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
2sk3192.pdf
isc N-Channel MOSFET Transistor 2SK3192FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 68m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3193.pdf
isc N-Channel MOSFET Transistor 2SK3193FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 150m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
