SK3194 Todos los transistores

 9.1. Size:207K  1
 2sk3193.pdf

Power MOSFETs 2SK3193 Silicon N-channel power MOSFET Unit mm For switching 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Features 3.2 0.1 Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown 2.0 0.1 2.0 0.2 1.1 0.1 0.6 0.2 Absolute Maximum Ratings TC = 25 C Parameter Symbol Rating Unit 5.45 0.3 Drain-s

 9.2. Size:211K  renesas
 3sk319.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:87K  panasonic
 2sk3192.pdf

Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 (3.2) Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron 3.2 0.1 No secondary breakdown Applications 2.0 0.1 2.0 0.2 PDP Switching mode regulator 1.1 0.1 0.6 0.2 Absolute Maximum Ratings TC = 25 C 5.45

 9.4. Size:51K  hitachi
 2sk319 2sk320.pdf

 9.5. Size:43K  sanken-ele
 2sk3199.pdf

2SK3199 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 500 V I = 100 A, V = 0V (BR) DSS D GS V 500 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 500V, V = 0V DSS DS GS I 5A D V 2.0 3.0 4.0 V V = 10V, I = 1mA TH DS D I 2

 9.6. Size:251K  inchange semiconductor
 2sk3199.pdf

isc N-Channel MOSFET Transistor 2SK3199 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.7. Size:274K  inchange semiconductor
 2sk3192.pdf

isc N-Channel MOSFET Transistor 2SK3192 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 68m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.8. Size:273K  inchange semiconductor
 2sk3193.pdf

isc N-Channel MOSFET Transistor 2SK3193 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 350V(Min) DSS Static Drain-Source On-Resistance R = 150m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid