SK3270 Todos los transistores

 0.1. Size:235K  1
 2sk3270-01.pdf

N-channel MOS-FET 2SK3270-01 6,5m Trench Gate MOSFET 60V 80A 135W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), u

 0.2. Size:289K  inchange semiconductor
 2sk3270-01.pdf

isc N-Channel MOSFET Transistor 2SK3270-01 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 9.1. Size:137K  1
 2sk3273-01mr.pdf

N-channel MOS-FET 2SK3273-01MR 6,5m Trench Gate MOSFET 60V 70A 70W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), u

 9.2. Size:30K  sanyo
 2sk3278.pdf

Ordering number ENN6680 2SK3278 N-Channel Silicon MOSFET 2SK3278 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2083B Ultrahigh-speed switching. [2SK3278] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3278] 6.5 2.3 5.0 0.5 4

 9.3. Size:127K  renesas
 2sk3274.pdf

2SK3274 (L), 2SK3274 (S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0300 Rev.3.00 May 15, 2006 Features Low on-resistance RDS (on) = 10 m typ. 4.5 V gate drive device High speed switching Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (Package name DPAK (S) ) 4 D 2

 9.4. Size:140K  renesas
 rej03g1098 2sk3274lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.5. Size:70K  njs
 sk3275.pdf

 9.6. Size:217K  panasonic
 2sk3277.pdf

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3277 Silicon N-channel power MOSFET Unit mm 6.5 0.1 Features 2.3 0.1 5.3 0.1 4.35 0.1 Avalanche energy capability guaranteed 0.5 0.1 High-speed switching No secondary breakdown Applications 1.0 0.1 Non-contact relay 0.1 0.05 0.5 0.1 Solenoid drive 0.75 0.1 2.

 9.7. Size:355K  fuji
 2sk3272-01sj-01s-01l.pdf

2SK3272-01L,S,SJ 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof See to P4 Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25 C unless otherwise s

 9.8. Size:255K  fuji
 2sk3271-01.pdf

N-channel MOS-FET 2SK3271-01 6,5m Trench Gate MOSFET 60V 100A 155W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

 9.9. Size:357K  inchange semiconductor
 2sk3272s.pdf

isc N-Channel MOSFET Transistor 2SK3272S FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @VGS= 40V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.10. Size:280K  inchange semiconductor
 2sk3273.pdf

isc N-Channel MOSFET Transistor 2SK3273 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.11. Size:280K  inchange semiconductor
 2sk3273-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3273-01MR FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 9.12. Size:357K  inchange semiconductor
 2sk3272-01sj.pdf

isc N-Channel MOSFET Transistor 2SK3272-01SJ FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @VGS= 40V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 9.13. Size:357K  inchange semiconductor
 2sk3272-01s.pdf

isc N-Channel MOSFET Transistor 2SK3272-01S FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @VGS= 40V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.14. Size:372K  inchange semiconductor
 2sk3271-01.pdf

isc N-Channel MOSFET Transistor 2SK3271-01 FEATURES With TO-247 packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-

 9.15. Size:283K  inchange semiconductor
 2sk3272l.pdf

isc N-Channel MOSFET Transistor 2SK3272L FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @VGS= 40V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.16. Size:266K  inchange semiconductor
 2sk3271.pdf

isc N-Channel MOSFET Transistor 2SK3271 FEATURES With TO-3P packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

 9.17. Size:355K  inchange semiconductor
 2sk3278i.pdf

isc N-Channel MOSFET Transistor 2SK3278I FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 36m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.18. Size:287K  inchange semiconductor
 2sk3278d.pdf

isc N-Channel MOSFET Transistor 2SK3278D FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 36m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.19. Size:283K  inchange semiconductor
 2sk3272-01l.pdf

isc N-Channel MOSFET Transistor 22SK3272-01L FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) @VGS= 40V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen