SK3623 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SK3623

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-base (Vcb): 450 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 15 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO66

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SK3623 datasheet

 9.1. Size:670K  toshiba
 2sk362.pdf pdf_icon

SK3623

2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current Unit mm and Impedance Converter Applications High breakdown voltage VGDS = -50 V High input impedance IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON) RDS (ON) = 80 (typ.) (IDSS = 5 mA) Absolute Maximum Ratings (Ta = 25 C) Cha

 9.2. Size:313K  toshiba
 2sk3625.pdf pdf_icon

SK3623

2SK3625 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3625 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 65 m (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 200 V) Enhancement mode Vth = 3.0 to 5.0 V (VDS = 1

 9.3. Size:39K  kexin
 2sk3628.pdf pdf_icon

SK3623

SMD Type IC SMD Type Transistors Silicon N-channel Power MOSFET 2SK3628 TO-263 Unit mm +0.2 Features 4.57-0.2 1.27+0.1 -0.1 High-speed switching Low ON resistance Ron No secondary breakdown Avalanche energy capability guaranteed 0.1max 1.27+0.1 -0.1 +0.1 0.81-0.1 2.54 1Gate 2.54+0.2 +0.2 -0.2 +0.1 5.08-0.1 0.4-0.2 2Drain 3 Source Absolute Maximum Ratings Ta = 25 Para

Otros transistores... SK3218, SK3247, SK3260, SK3270, SK3356, SK3441, SK3511, SK3538, TIP42C, SK5801, SK6346, SM1258, SM1259, SM2159, SM2160, SM2160P, SM2164