SMBT3903 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMBT3903
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO236
Búsqueda de reemplazo de SMBT3903
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SMBT3903 datasheet
7.1. Size:178K siemens
smbt3906.pdf 
PNP Silicon Switching Transistor SMBT 3906 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3904 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3906 s2A Q68000-A4417 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0
7.2. Size:31K siemens
smbt3906 s2a sot363.pdf
SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 Low collector-emitter saturation voltage 6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type SMBT 3904S (NPN) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3906S s2A Q62702-A1202 1/4=E1/E2 2/5=B1/B
7.3. Size:215K siemens
smbt3904 s1a sot23.pdf
NPN Silicon Switching Transistor SMBT 3904 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3906 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3904 s1A Q68000-A4416 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0
7.4. Size:212K siemens
smbt3904.pdf
NPN Silicon Switching Transistor SMBT 3904 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3906 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3904 s1A Q68000-A4416 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0
7.5. Size:29K siemens
smbt3904s s1a sot363.pdf
SMBT 3904S NPN Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 Low collector-emitter saturation voltage 6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type SMBT 3906S (PNP) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3904S s1A Q62702-A1201 1/4=E1/E2 2/5=B1/B
7.6. Size:48K siemens
smbt3904pn s3p sot363.pdf
SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 High current gain 5 Low collector-emitter saturation voltage 6 Two (galvanic) internal isolated NPN/PNP Transistors in one package 3 2 VPS05604 1 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C SMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C
7.8. Size:862K infineon
smbt3904 mmbt3904 smbt3904s.pdf
SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S Two (galvanic) internal isolated transistors with good matching in one package Complementary types SMBT3906... MMBT3906 SMBT3904S For orientation in reel see package information below Pb-free (RoHS compliant)
7.9. Size:881K infineon
smbt3906 mmbt3906 smbt3906s smbt3906u.pdf
SMBT3906...MMBT3906 PNP Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U Two (galvanic) internal isolated transistor with good matching in one package Complementary types SMBT3904...MMBT3904 (NPN) SMBT3906S/ U for orientation in reel see package information below P
7.10. Size:107K infineon
smbt3906 mmbt3906.pdf
SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type 2 SMBT3904/ MMBT3904 (NPN) 1 VPS05161 Type Marking Pin Configuration Package SMBT3906/ MMBT3906 s2A SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage VCEO 40 Coll
7.11. Size:145K infineon
smbt3904series mmbt3904.pdf
SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U Two (galvanic) internal isolated transistors with good matching in one package Complementary types SMBT3906... MMBT3906 SMBT3904S / U For orientation in reel see package information below Pb-free
7.12. Size:847K infineon
smbt3904pn smbt3904upn.pdf
SMBT3904...PN NPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177 Type Marking Pin Configuration Package
7.13. Size:884K infineon
smbt3906-s-u mmbt3906.pdf
SMBT3906...MMBT3906 PNP Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U Two (galvanic) internal isolated transistor with good matching in one package Complementary types SMBT3904...MMBT3904 (NPN) SMBT3906S/ U for orientation in reel see package information below P
7.15. Size:76K infineon
smbt3906u.pdf
SMBT3906U PNP Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package 3 2 Complementary type SMBT3904U (NPN) 1 C1 B2 E2 VPW09197 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking Pin Configuration Package SMBT3906U s2A 1=E1 2=
7.16. Size:126K onsemi
mbt3906dw1 smbt3906dw1.pdf
MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat
7.17. Size:908K onsemi
smbt3904dw1t1g mbt3904dw.pdf
MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G Dual General Purpose Transistors http //onsemi.com The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is MARKING designed for general purpose amplifier applications and is housed in DIAGRAM the SOT-363 six-leaded surface mount package. By putting two 6 discrete devices in one
7.18. Size:96K onsemi
mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf
MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de
7.19. Size:130K onsemi
mbt3906dw1t1g smbt3906dw1t1g.pdf
MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount
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