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2N5179 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5179
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 900 MHz
   Capacitancia de salida (Cc): 1 pF
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO72

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2N5179 Datasheet (PDF)

 ..1. Size:60K  central
2n5179.pdf

2N5179

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 ..2. Size:47K  bocasemi
2n5179.pdf

2N5179
2N5179

IS / IECQC 700000IS/ISO 9002IS / IECQC 750100Lic# QSC/L- 000019.2Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerNPN SILICON PLANAR TRANSISTOR 2N5179TO-72Boca Semiconductor Corp BSCLow Noise Tuned Amplifiers.ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 20 VCollector -Emitter Voltage VCEO 12 VEmitte

 9.1. Size:289K  fairchild semi
2n5172.pdf

2N5179
2N5179

2N5172B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Voltage 25 VVEBO Em

 9.2. Size:70K  central
2n5172 2n6076 mps5172 mps6076.pdf

2N5179

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 9.3. Size:75K  secos
2n5172.pdf

2N5179

2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Amplifier TransistorG H EmitterCollector Base JA DCollector Millimeter REF.Min. Max.BA 4.40 4.70B 4.30 4.70K C 12.70 -D 3.30 3.81 E 0.3

 9.4. Size:130K  cdil
2n5172.pdf

2N5179
2N5179

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172TO-92Plastic PackageBCEABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 25 VVEBOEmitter Base Voltage 5 VICCollector Current C

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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