SS9016 Todos los transistores

 

SS9016 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SS9016
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 20 V
   Corriente del colector DC máxima (Ic): 0.025 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 400 MHz
   Ganancia de corriente contínua (hfe): 28
   Paquete / Cubierta: TO92
 

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SS9016 Datasheet (PDF)

 9.1. Size:38K  fairchild semi
 ss9014.pdf pdf_icon

SS9016

SS9014Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 45 VVEBO

 9.2. Size:40K  fairchild semi
 ss9018.pdf pdf_icon

SS9016

SS9018AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 15 VVEBO Emitter-Base Voltage 5 VIC Colle

 9.3. Size:35K  fairchild semi
 ss9012.pdf pdf_icon

SS9016

SS90121W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsV

 9.4. Size:38K  fairchild semi
 ss9011.pdf pdf_icon

SS9016

SS9011AM Converter, AM/FM IF AmplifierGeneral Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 30 mAPC Collector Power Dissipatio

MOSTRAR MÁS

Otros transistores... SS2503A , SS8050 , SS8550 , SS9011 , SS9012 , SS9013 , SS9014 , SS9015 , BD777 , SS9018 , ST03 , ST10 , ST1026 , ST1050 , ST11 , ST12 , ST1290 .

History: 2SB521-1 | BDY95 | F123 | 2SC3111

 

 
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