ST3904 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST3904NPN switching transistor1999 Apr 22Product specificationSupersedes data of 1997 Jul 04Philips Semiconductors Product specificationNPN switching transistor PMST3904FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Tele

KST39043General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temp

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

General purpose (dual digital transistors) EMH2 / UMH2N / IMH2A Features Two DTC144Es chips in a EMT or UMT or SMT package. Dimensions (Unit : mm) 1) EMH22) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (4) ( )3(5) (2)3) Transistor elements are independent, eliminating interference. ( ) (1)61.24) Mounting cost and area can be cut in h

Digital Transistor (Dual Digital Transistors for Inverter Drive) EMD9 / UMD9N / IMD9A Features Dimensions (Unit : mm) 1) DTA114Y and DTC114Y transistors are built-in a EMT EMD9 or UMT or SMT package. (4) (3)(5) (2)(6) (1)Inner circuit 1.21.6EMD9 / UMD9N IMD9A(3) (2) (1) (4) (5) (6)R1 R2 R1 R2Each lead has same dimensionsDTr1 DTr1DTr2 DTr2 ROHM : EMT6

UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 Features Dimensions (Unit : mm) 1) BVCEO > 40V (IC = 1mA) UMT39042) Complements the UMT3906 / SST3906 / MMST3906. (1) Emitter ROHM : UMT3(2) BaseEIAJ : SC-70(3) CollectorSOT-323SST3904 Package, marking and packaging specifications Part No. UMT3904 SST3904 MMST39

CMST3904 NPNCMST3906 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMST3904, SILICON TRANSISTORSCMST3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for small signal general purpose amplifier and switching applications.MAR

DST3904DJ40V DUAL NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data VCEO = 40V Case: SOT-963 IC = 200mA Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ideally Suited for Automated Assembly Processes Terminals

MMST3904 60V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > 40V Case: SOT323 Case Material: Molded Plastic. Green Molding Compound. IC = 200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals: F

MMST3904Features Epitaxial Planar Die Construction Complementary PNP Type Available MMST3906NPN Ultra-Small Surface Mount Package Halogen Free Available Upon Request By Adding Suffix "-HF"Small Signal Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingTransistors Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant

NST3904DP6T5GDual General PurposeTransistorThe NST3904DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

Dual General PurposeTransistorNST3904DXV6T1G,NSVT3904DXV6T1G,NST3904DXV6T5Gwww.onsemi.comThe NST/NSV3904DXV6 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563(3) (2) (1)six-leaded surface mount package. By putting two discrete devices inone package, this device is ide

DATA SHEETwww.onsemi.comNPN General PurposeCOLLECTOR3Transistor1NST3904F3T5GBASEThe NST3904F3T5G device is a spin-off of our popular2SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isEMITTERdesigned for general purpose amplifier applications and is housed inthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where

NST3904DXV6T1,NST3904DXV6T5Dual General PurposeTransistorThe NST3904DXV6T1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power su

NST3904DXV6T1,NSVT3904DXV6T1,NST3904DXV6T5,SNST3904DXV6T5Dual General Purposehttp://onsemi.comTransistorThe NST3904DXV6T1 device is a spin-off of our popular(3) (2) (1)SOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in Q1 Q2one packag

NST3904F3T5GNPN General PurposeTransistorThe NST3904F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3

DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose Transistor3NPN Silicon1BASENST3904MX22EMITTERFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGS2X2DFN3 (1.0 x 0.6 mm)Rating Symbol Value UnitCASE 714ACCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 V

NST3904DP6T5GDual General PurposeTransistorThe NST3904DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mountapplication

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate TransistorsMMST3904 TRANSISTOR (NPN) SOT323 FEATURES Complementary to MMST3906 MARKING:K2N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Value Unit Symbol1. BASE V Collector-Base Voltage 60 V CBO2. EMITTER V Collector-Emitter Voltage 40 V CEO3. COLLECTOR

MMST3904TRANSISTOR(NPN)SOT323 FEATURES Complementary to MMST3906 MARKING:K2N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO2. EMITTER V Collector-Emitter Voltage 40 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 200 mA P Collector Power Dissipation 200 mW

LESHAN RADIO COMPANY, LTD.NPN General PurposeTransistorLNST3904F3T5GThe LNST3904F3T5G device is a spin-off of our popularS-LNST3904F3T5GSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inthe SOT-1123 surface mount package. This device is ideal forCOLLECTORlow-power surface mount applications where boar

SMD Type TransistorsNPN TransistorsMMST3904 (KMST3904) Features Epitaxial planar die construction Complementary to MMST39061.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 200 mA

SMD Type TransistorsNPN TransistorsMMST3904 (KMST3904) Features Epitaxial planar die construction Complementary to MMST39061.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 200 mA

MMST3904NPN Plastic-Encapsulate TransistorFeaturesPin ConfigurationsV CE = 60V3 COLLECTORI C = 0.2A f T =300MHZ @VCE=20V, IC=10mA,f=100MHz 1 BASE2 EMITTERGeneral Description As complementary type the PNP transistorMMST3906 is recommended Epitaxial planar die constructio SOT-323 Plastic Package.Applying Amplifiers and switchingAbsolute Maximu