ST3904 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST3904
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: TO92
Búsqueda de reemplazo de ST3904
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ST3904 datasheet
0.1. Size:52K philips
pmst3904 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST3904 NPN switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 Jul 04 Philips Semiconductors Product specification NPN switching transistor PMST3904 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Tele
0.2. Size:55K fairchild semi
kst3904.pdf
KST3904 3 General Purpose Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storage Temp
0.3. Size:349K nxp
pmst3904.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.4. Size:137K rohm
umh2n umt3904 sst3904 mmst3904 2.pdf
General purpose (dual digital transistors) EMH2 / UMH2N / IMH2A Features Two DTC144Es chips in a EMT or UMT or SMT package. Dimensions (Unit mm) 1) EMH2 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (4) ( ) 3 (5) (2) 3) Transistor elements are independent, eliminating interference. ( ) (1) 6 1.2 4) Mounting cost and area can be cut in h
0.5. Size:140K rohm
umd9n umt3904 sst3904 mmst3904 3.pdf
Digital Transistor (Dual Digital Transistors for Inverter Drive) EMD9 / UMD9N / IMD9A Features Dimensions (Unit mm) 1) DTA114Y and DTC114Y transistors are built-in a EMT EMD9 or UMT or SMT package. (4) (3) (5) (2) (6) (1) Inner circuit 1.2 1.6 EMD9 / UMD9N IMD9A (3) (2) (1) (4) (5) (6) R1 R2 R1 R2 Each lead has same dimensions DTr1 DTr1 DTr2 DTr2 ROHM EMT6
0.6. Size:103K rohm
umt3904 sst3904 mmst3904.pdf
UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 Features Dimensions (Unit mm) 1) BVCEO > 40V (IC = 1mA) UMT3904 2) Complements the UMT3906 / SST3906 / MMST3906. (1) Emitter ROHM UMT3 (2) Base EIAJ SC-70 (3) Collector SOT-323 SST3904 Package, marking and packaging specifications Part No. UMT3904 SST3904 MMST39
0.7. Size:402K central
cmst3904 cmst3906.pdf
CMST3904 NPN CMST3906 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMST3904, SILICON TRANSISTORS CMST3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for small signal general purpose amplifier and switching applications. MAR
0.8. Size:126K diodes
dst3904dj.pdf
DST3904DJ 40V DUAL NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data VCEO = 40V Case SOT-963 IC = 200mA Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ideally Suited for Automated Assembly Processes Terminals
0.9. Size:202K diodes
mmst3904.pdf
MMST3904 60V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > 40V Case SOT323 Case Material Molded Plastic. Green Molding Compound. IC = 200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals F
0.10. Size:751K mcc
mmst3904.pdf
MMST3904 Features Epitaxial Planar Die Construction Complementary PNP Type Available MMST3906 NPN Ultra-Small Surface Mount Package Halogen Free Available Upon Request By Adding Suffix "-HF" Small Signal Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Transistors Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant
0.11. Size:95K onsemi
nst3904dp6.pdf
NST3904DP6T5G Dual General Purpose Transistor The NST3904DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat
0.12. Size:208K onsemi
nst3904dxv6t1g nsvt3904dxv6t1g nst3904dxv6t5g.pdf
Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G www.onsemi.com The NST/NSV3904DXV6 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-563 (3) (2) (1) six-leaded surface mount package. By putting two discrete devices in one package, this device is ide
0.13. Size:155K onsemi
nst3904f3t5g.pdf
DATA SHEET www.onsemi.com NPN General Purpose COLLECTOR 3 Transistor 1 NST3904F3T5G BASE The NST3904F3T5G device is a spin-off of our popular 2 SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is EMITTER designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where
0.14. Size:99K onsemi
nst3904dxv6t1-5.pdf
NST3904DXV6T1, NST3904DXV6T5 Dual General Purpose Transistor The NST3904DXV6T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power su
0.15. Size:174K onsemi
nst3904dxv6t.pdf
NST3904DXV6T1, NSVT3904DXV6T1, NST3904DXV6T5, SNST3904DXV6T5 Dual General Purpose http //onsemi.com Transistor The NST3904DXV6T1 device is a spin-off of our popular (3) (2) (1) SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-563 six-leaded surface mount package. By putting two discrete devices in Q1 Q2 one packag
0.16. Size:91K onsemi
nst3904f3.pdf
NST3904F3T5G NPN General Purpose Transistor The NST3904F3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in http //onsemi.com the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where board space is at a COLLECTOR premium. 3
0.17. Size:111K onsemi
nst3904mx2.pdf
DATA SHEET www.onsemi.com COLLECTOR General Purpose Transistor 3 NPN Silicon 1 BASE NST3904MX2 2 EMITTER Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS 2 X2DFN3 (1.0 x 0.6 mm) Rating Symbol Value Unit CASE 714AC Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 V
0.18. Size:182K onsemi
nst3904dp6t5g.pdf
NST3904DP6T5G Dual General Purpose Transistor The NST3904DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in www.onsemi.com one package, this device is ideal for low-power surface mount application
0.19. Size:2135K jiangsu
mmst3904.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST3904 TRANSISTOR (NPN) SOT 323 FEATURES Complementary to MMST3906 MARKING K2N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Value Unit Symbol 1. BASE V Collector-Base Voltage 60 V CBO 2. EMITTER V Collector-Emitter Voltage 40 V CEO 3. COLLECTOR
0.20. Size:325K htsemi
mmst3904.pdf
MMST3904 TRANSISTOR(NPN) SOT 323 FEATURES Complementary to MMST3906 MARKING K2N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO 2. EMITTER V Collector-Emitter Voltage 40 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 200 mA P Collector Power Dissipation 200 mW
0.21. Size:196K lrc
lnst3904f3t5g.pdf
LESHAN RADIO COMPANY, LTD. NPN General Purpose Transistor LNST3904F3T5G The LNST3904F3T5G device is a spin-off of our popular S-LNST3904F3T5G SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. This device is ideal for COLLECTOR low-power surface mount applications where boar
0.22. Size:1116K kexin
mmst3904.pdf
SMD Type Transistors NPN Transistors MMST3904 (KMST3904) Features Epitaxial planar die construction Complementary to MMST3906 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 200 mA
0.23. Size:843K kexin
kmst3904.pdf
SMD Type Transistors NPN Transistors MMST3904 (KMST3904) Features Epitaxial planar die construction Complementary to MMST3906 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 200 mA
0.24. Size:588K born
mmst3904.pdf
MMST3904 NPN Plastic-Encapsulate Transistor Features Pin Configurations V CE = 60V 3 COLLECTOR I C = 0.2A f T =300MHZ @VCE=20V, IC=10mA,f=100MHz 1 BASE 2 EMITTER General Description As complementary type the PNP transistor MMST3906 is recommended Epitaxial planar die constructio SOT-323 Plastic Package. Applying Amplifiers and switching Absolute Maximu
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