ST40 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST40
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.025 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 15 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hFE): 17
Encapsulados: TO5
Búsqueda de reemplazo de ST40
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ST40 datasheet
0.1. Size:48K philips
bst39-bst40 4.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST39; BST40 NPN high-voltage transistors Product specification 2000 Jul 03 Supersedes data of 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistors BST39; BST40 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 350 V). 1 emitter 2 collector APPLICATIONS
0.2. Size:167K nxp
bst39 bst40.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.3. Size:59K vishay
u401 sst404 u404 sst406 u406.pdf
SST/U401 Series Vishay Siliconix Monolithic N-Channel JFET Duals SST404 U401 U406 SST406 U404 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV) U401 0.5 to 2.5 40 1 2 5 SST/U404 0.5 to 2.5 40 1 2 15 SST/U406 0.5 to 2.5 40 1 2 40 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Diff
0.4. Size:12K diodes
bst40.pdf
SOT89 NPN SILICON PLANAR BST40 HIGH VOLTAGE TRANSISTOR ISSUE 3 JANUARY 1996 COMPLEMENTARY TYPE BST15 C PARTMAKING DETAIL AT2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 1A Continuous Collector Current IC 500 mA Power Diss
0.5. Size:54K ixys
ixst40n60b.pdf
IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C75 A IC90 TC
0.6. Size:55K ixys
ixsh40n60b ixst40n60b.pdf
IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C75 A IC90 TC
0.7. Size:26K calogic
sst404 sst405 sst406.pdf
N-Channel JFET Monolithic Dual LLC SST404 / SST405 / SST406 FEATURES DESCRIPTION n Very Low Noise . . . . . . . . . . . . . e
0.9. Size:340K htsemi
bst39 bst40.pdf
BST39,BST40 TRANSISTOR (NPN) SOT-89-3L FEATURES Low Current 1. BASE High Voltage 2. COLLECTOR APPLICATIONS General Purpose Switching and Amplification 3. EMITTER MARKING BCT39 AT1 BCT40 AT2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit BST39 400 VCBO Collector-Base Voltage V BST40 300 Collector-Emitter Voltage BST39 350 VCEO V
0.10. Size:775K oriental semi
ost40n120hmf.pdf
OST40N120HMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
0.11. Size:617K oriental semi
ost40n120hemf.pdf
OST40N120HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
0.12. Size:704K oriental semi
ost40n65hmf.pdf
OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
0.13. Size:701K oriental semi
ost40n65hxf.pdf
OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
0.14. Size:770K oriental semi
ost40n65hemf.pdf
OST40N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
0.15. Size:717K oriental semi
ost40n65kmf.pdf
OST40N65KMF Enhancement Mode N-Channel Power IGBT General Description OST40N65KMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
0.16. Size:742K oriental semi
ost40n65pmf.pdf
OST40N65PMF Enhancement Mode N-Channel Power IGBT General Description OST40N65PMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
0.17. Size:582K winsok
wst4041.pdf
WST4041 P-Ch MOSFET Product Summery General Description The WST4041 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -40V 30m -6A for most of the synchronous buck converter applications . Applications The WST4041 meet the RoHS and Green Product High Frequency Point-of-Load Synch
0.18. Size:1200K winsok
wst4045.pdf
WST4045 P-Ch MOSFET Product Summery General Description The WST4045 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -40V 73m -4.3A charge for most of the synchronous buck converter applications . Applications The WST4045 meet the RoHS and Green High Frequency Point-of-Load Synchronous
0.19. Size:1023K winsok
wst4040.pdf
WST4040 N-Ch MOSFET General Description Product Summery The WST4040 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 40V 35m 5.8A for most of the synchronous buck converter applications . Applications The WST4040 meet the RoHS and Green Product High Frequency Point-of-Load Synchr
Otros transistores... ST29
, ST30
, ST31
, ST32
, ST33
, ST34
, ST3904
, ST3906
, 2SD718
, ST400
, ST401
, ST4044
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