ST40 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BST39; BST40NPN high-voltage transistorsProduct specification 2000 Jul 03Supersedes data of 1999 Apr 26Philips Semiconductors Product specificationNPN high-voltage transistors BST39; BST40FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 350 V).1 emitter2 collectorAPPLICATIONS

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SST/U401 SeriesVishay SiliconixMonolithic N-Channel JFET DualsSST404 U401 U406SST406 U404PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV)U401 0.5 to 2.5 40 1 2 5SST/U404 0.5 to 2.5 40 1 2 15SST/U406 0.5 to 2.5 40 1 2 40FEATURES BENEFITS APPLICATIONSD Monolithic Design D Tight Diff

SOT89 NPN SILICON PLANARBST40HIGH VOLTAGE TRANSISTORISSUE 3 JANUARY 1996 COMPLEMENTARY TYPE BST15CPARTMAKING DETAIL AT2ECBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 250 VEmitter-Base Voltage VEBO 5VPeak Pulse Current ICM 1AContinuous Collector Current IC 500 mAPower Diss

IXSH 40N60B VCES = 600VHigh Speed IGBTIXST 40N60B IC25 = 75AVCE(sat) = 2.2VShort Circuit SOA Capabilitytfi typ = 100 nsPreliminary dataTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C75 AIC90 TC

IXSH 40N60B VCES = 600VHigh Speed IGBTIXST 40N60B IC25 = 75AVCE(sat) = 2.2VShort Circuit SOA Capabilitytfi typ = 100 nsPreliminary dataTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C75 AIC90 TC

N-Channel JFETMonolithic DualLLCSST404 / SST405 / SST406FEATURES DESCRIPTIONn Very Low Noise . . . . . . . . . . . . . e

BST39,BST40 TRANSISTOR (NPN) SOT-89-3L FEATURES Low Current1. BASE High Voltage2. COLLECTOR APPLICATIONS General Purpose Switching and Amplification 3. EMITTER MARKING:BCT39:AT1 BCT40:AT2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitBST39 400VCBO Collector-Base Voltage V BST40 300Collector-Emitter Voltage BST39 350VCEO V

OST40N120HMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

OST40N120HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

OST40N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

OST40N65KMF Enhancement Mode N-Channel Power IGBT General Description OST40N65KMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

OST40N65PMF Enhancement Mode N-Channel Power IGBT General Description OST40N65PMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

WST4041P-Ch MOSFETProduct SummeryGeneral Description The WST4041 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -40V 30m -6Afor most of the synchronous buck converter applications . Applications The WST4041 meet the RoHS and Green Product High Frequency Point-of-Load Synch

WST4045P-Ch MOSFETProduct SummeryGeneral Description The WST4045 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -40V 73m -4.3Acharge for most of the synchronous buck converter applications . Applications The WST4045 meet the RoHS and Green High Frequency Point-of-Load Synchronous

WST4040N-Ch MOSFETGeneral Description Product SummeryThe WST4040 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 40V 35m 5.8Afor most of the synchronous buck converter applications . Applications The WST4040 meet the RoHS and Green Product High Frequency Point-of-Load Synchr