2N5211 Todos los transistores

 

2N5211 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5211
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO39
 

 Búsqueda de reemplazo de 2N5211

   - Selección ⓘ de transistores por parámetros

 

2N5211 Datasheet (PDF)

 9.1. Size:277K  motorola
 2n5209 2n5210.pdf pdf_icon

2N5211

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5209/DAmplifier TransistorsNPN Silicon2N52092N5210COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current C

 9.2. Size:90K  fairchild semi
 2n5210 mmbt5210.pdf pdf_icon

2N5211

2N5210/MMBT5210NPN General Purpose AmplifierCThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.ECTO-92BEB SOT-23Mark: 3MAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 50 VVEBO Emitter-B

 9.3. Size:21K  samsung
 2n5210.pdf pdf_icon

2N5211

2N5210 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 50V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 4.5 VCollector Current IC 50 mACollector Dissipation PC 625 mWJun

 9.4. Size:69K  central
 2n5209 2n5210.pdf pdf_icon

2N5211

DATA SHEET2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V

MOSTRAR MÁS

Otros transistores... 2N5201 , 2N5202 , 2N5203 , 2N5208 , 2N5209 , 2N520A , 2N521 , 2N5210 , BC557 , 2N5212 , 2N5213 , 2N5214 , 2N5215 , 2N5216 , 2N5217 , 2N5218 , 2N5219 .

History: 2SD1319 | 2SA484 | 2SC3638

 

 
Back to Top

 


 
.