2N5219 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5209/DAmplifier TransistorsNPN Silicon2N52092N5210COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current C

2N5210/MMBT5210NPN General Purpose AmplifierCThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.ECTO-92BEB SOT-23Mark: 3MAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 50 VVEBO Emitter-B

2N5210 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 50V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 4.5 VCollector Current IC 50 mACollector Dissipation PC 625 mWJun

DATA SHEET2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V