2N523 Todos los transistores

 0.1. Size:57K  central
 2n5232a.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 0.2. Size:113K  semelab
 2n5237s.pdf

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base

 0.3. Size:303K  cdil
 2n5232 a.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N5232 2N5232A TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 50 V VCBO Collector Base Voltage 70 V VEBO Emitter Base Voltage 5V IC Collector Current 1

 0.4. Size:55K  microelectronics
 2n5232.pdf

 0.5. Size:100K  microsemi
 2n5238s.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS JAN 2N4150 2N5237 2N5238 JANTX 2N4150S 2N5237S 2N5238S JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N4150 2N5237 2N5238

 0.6. Size:145K  semicoa
 2n5237.pdf

Data Sheet No. 2N5237 Generic Part Number Type 2N5237 2N5237 Geometry 3111 Polarity NPN REF MIL-PRF-19500/394 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semi

 0.7. Size:122K  aeroflex
 2n4150 2n5237 2n5238.pdf

NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 TO-5 Package Maximum Ratings Ratings Symbol 2N4150 2N5237 2N5238 Units Collector - Emitter Voltage VCEO 70 120 170 Vdc Collector - Base Voltage VCBO 100 150 200 Vdc Emitter - Base Voltage VEBO 10.0 Vdc Collector Current IC 4.0 Adc Total Power Dissipation @

 0.8. Size:1285K  sprague
 2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf

 0.9. Size:117K  inchange semiconductor
 2n5239.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5239 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Switching regulator Inverters Power amplifiers Deflection circuits High-voltage bridge amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-