2N523
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N523
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 15
V
Tensión colector-emisor (Vce): 6
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 85
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Capacitancia de salida (Cc): 24
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2N523
2N523
Datasheet (PDF)
0.1. Size:57K central
2n5232a.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
0.2. Size:113K semelab
2n5237s.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base
0.3. Size:303K cdil
2n5232 a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N52322N5232ATO-92Plastic PackageABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 50 VVCBOCollector Base Voltage 70 VVEBOEmitter Base Voltage 5VICCollector Current 1
0.5. Size:100K microsemi
2n5238s.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS JAN 2N4150 2N5237 2N5238 JANTX 2N4150S 2N5237S 2N5238S JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N4150 2N5237 2N5238
0.6. Size:145K semicoa
2n5237.pdf
Data Sheet No. 2N5237Generic Part Number:Type 2N52372N5237Geometry 3111Polarity NPNREF: MIL-PRF-19500/394Qual Level: JAN - JANTXVFeatures: Silicon power transistor for use inhigh speed switching applications. Housed in a TO-39 case. Also available in chip form usingthe 3111 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/394 whichSemi
0.7. Size:122K aeroflex
2n4150 2n5237 2n5238.pdf
NPN Power Silicon Transistor2N4150, 2N5237 & 2N5238Features Available in JAN, JANTX, and JANTXVper MIL-PRF-19500/384 TO-5 PackageMaximum RatingsRatings Symbol 2N4150 2N5237 2N5238 UnitsCollector - Emitter Voltage VCEO 70 120 170 VdcCollector - Base Voltage VCBO 100 150 200 VdcEmitter - Base Voltage VEBO 10.0 VdcCollector Current IC 4.0 AdcTotal Power Dissipation @
0.9. Size:117K inchange semiconductor
2n5239.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5239 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Switching regulator Inverters Power amplifiers Deflection circuits High-voltage bridge amplifiers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-
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