2N5237 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5237
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO5
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2N5237 datasheet
2n5237.pdf
Data Sheet No. 2N5237 Generic Part Number Type 2N5237 2N5237 Geometry 3111 Polarity NPN REF MIL-PRF-19500/394 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semi
2n4150 2n5237 2n5238.pdf
NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 TO-5 Package Maximum Ratings Ratings Symbol 2N4150 2N5237 2N5238 Units Collector - Emitter Voltage VCEO 70 120 170 Vdc Collector - Base Voltage VCBO 100 150 200 Vdc Emitter - Base Voltage VEBO 10.0 Vdc Collector Current IC 4.0 Adc Total Power Dissipation @
2n5237s.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base
2n5232a.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
Otros transistores... 2N5230 , 2N5231 , 2N5232 , 2N5232A , 2N5233 , 2N5234 , 2N5235 , 2N5236 , TIP42 , 2N5238 , 2N5239 , 2N523A , 2N524 , 2N5240 , 2N5241 , 2N5242 , 2N5243 .
History: 2N5231 | 2N5235
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