2N5238 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5238
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 170 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO5
Búsqueda de reemplazo de 2N5238
2N5238 Datasheet (PDF)
2n4150 2n5237 2n5238.pdf

NPN Power Silicon Transistor2N4150, 2N5237 & 2N5238Features Available in JAN, JANTX, and JANTXVper MIL-PRF-19500/384 TO-5 PackageMaximum RatingsRatings Symbol 2N4150 2N5237 2N5238 UnitsCollector - Emitter Voltage VCEO 70 120 170 VdcCollector - Base Voltage VCBO 100 150 200 VdcEmitter - Base Voltage VEBO 10.0 VdcCollector Current IC 4.0 AdcTotal Power Dissipation @
2n5238s.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS JAN 2N4150 2N5237 2N5238 JANTX 2N4150S 2N5237S 2N5238S JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) 2N4150 2N5237 2N5238
2n5232a.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5237s.pdf

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .



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