TIP117 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TIP110/112TIP115/117COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 32 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-220DESCRIPTION The TIP110 and TIP112 are siliconEpitaxial-Base NPN

MCCTIP115Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsTIP116CA 91311Phone: (818) 701-4933TIP117Fax: (818) 701-4939Features High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) Low Collector-Emitter Saturation VoltagePNP Epitaxial Complementary to TIP110/111/112 Lead Free Finish/RoHS Compliant (Note1) ("

TIP110, TIP111, TIP112(NPN); TIP115, TIP116,TIP117 (PNP)Plastic Medium-PowerComplementary Siliconwww.onsemi.comTransistorsDARLINGTONDesigned for general-purpose amplifier and low-speed switchingapplications. 2 AMPERECOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain -hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS= 1.0 Adc Collector-Emitt

SEMICONDUCTOR TIP117TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN ABASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.RS FEATURESPD High DC Current Gain. DIM MILLIMETERS: hFE=1000(Min.), VCE=-4V, IC=-1A.A 10.30 MAXB 15.30 MAX Low Collector-Emitter Saturation Voltage.C 0.80_+ Complementary to TIP112. D 3.60 0.20TE 3.00

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP112/TIP117 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform power amplifier circuit FEATURES Hi

TIP117(3CA117) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP112(3DA112) Features: Complement to TIP112(3DA112). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

isc Silicon PNP Darlington Power Transistor TIP117DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP112Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICA

SEMICONDUCTOR TIP117FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3EHigh DC Current Gain. C _2.70 0.3+D 0.76+0.09/-0.05: hFE=1000(Min.), VCE=-4V, IC=-1A._E 3.2 0.2+_F 3.0 0.3+Low Collector-Emitter Saturation Vol

Spec. No. : HE200204HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/4HTIP117PNP EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP117 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp

Order this documentMOTOROLAby TIP110/DSEMICONDUCTOR TECHNICAL DATAPlastic Medium-PowerNPNTIP110Complementary Silicon Transistors. . . designed for generalpurpose amplifier and lowspeed switching applications.TIP111* High DC Current Gain hFE = 2500 (Typ) @ IC = 1.0 Adc CollectorEmitter Sustaining Voltage @ 30 mAdcTIP112*VCEO(sus) = 60 Vdc (Min)

TIP110/112TIP115/117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP110, and TIP112 are siliconepitaxial-base NPN transistors in monolithicDarlington configuration mounted in JedecTO-220 plastic package. They are intented foruse in medium power linear and switchingapplications.32The complementary PNP types are TIP1

PNP EPITAXIALTIP115/116/117 SILICON DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-220MIN h =1000 @ V = -4V, I = -1AFE CE CLOW COLLECTOR-EMITTERSATURATION VOLTAGEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplementary to TIP110/111/112ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage :TIP115 VCBO -60

NPN EPITAXIALTIP110/111/112 SILICON DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-220MIN h =1000 @ V =4V, I =1AFE CE CLOW COLLECTOR-EMITTERSATURATION VOLTAGEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplementary to TIP115/116/117ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage :TIP110 VCBO 60 V1

MCCMicro Commercial ComponentsTMTIP110/111/11220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features The complementary PNP types are the TIP115/116/117 respectivelySilicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)Darlington Epoxy

UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting,peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and

UNISONIC TECHNOLOGIES CO., LTD TIP110A Preliminary PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURES * Low VCE(SAT) * High Current Gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Fre

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP110 TIP115TIP111 TIP116TIP112 TIP117NPN PNPTO-220Plastic PackageIntended for use in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL TIP110/115 TIP111/116 TIP112/117 UNITVCEO Collector Emitter Voltage 60

SEMICONDUCTOR TIP112TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN ABASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.RS FEATURESPD High DC Current Gain. DIM MILLIMETERS: hFE=1000(Min.), VCE=4V, IC=1A.A 10.30 MAXB 15.30 MAX Low Collector-Emitter Saturation Voltage.C 0.80_+ Complementary to TIP117. D 3.60 0.20TE 3.00F

SEMICONDUCTOR TIP112FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3EHigh DC Current Gain. C _2.70 0.3+D 0.76+0.09/-0.05: hFE=1000(Min.), VCE=4V, IC=1A._E 3.2 0.2+_F 3.0 0.3+Low Collector-Emitter Saturation Volta

TIP112 TO-220 Darlington Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 100 V VCE

TIP110 TO-220 Darlington Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V VCEO Co

TIP111 TO-220 Darlington Transistor (NPN)1. BASE TO-2202. COLLECTOR 3. EMITTER 3 21FeaturesHigh DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 V Dimensions in inches and (millimeters)V

Spec. No. : HE200203HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP112NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP112 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp

isc Silicon NPN Darlington Power Transistor TIP112DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP117Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon PNP Darlington Power Transistor TIP115DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP110Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

isc Silicon NPN Darlington Power Transistor TIP110DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP115Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon PNP Darlington Power Transistor TIP116DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -2ACE(sat) CComplement to Type TIP111Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

isc Silicon NPN Darlington Power Transistor TIP111DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP116Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS