TIP120 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TIP120/121/122TIP125/126/127COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The TIP120, TIP121 and TIP122 are siliconEpitaxial-Base NPN power transistors inmonolithic Darlington configuration mounted inJedec TO-220 plastic package. They are intentedfor use in power linear and switching applications.32The complement

NPN EPITAXIALTIP120/121/122 DARLINGTON TRANSISTORMEDIUM POWER LINEARTO-220SWITCHING APPLICATIONS Complementary to TIP125/126/127ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V: TIP120 80 V: TIP121 100 V: TIP122 Collector-Emitter Voltage VCEO: TIP120 60 V: TIP121 80 V: TIP122 VEBO 100 V1.Base 2.Collector 3.Em

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthTIP120Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low collector-emitter saturation voltageNPN Epitaxial Amplifier applications-emitter shunt resistors TO-220 compact packageDarlington Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix de

IMPORTANT NOTICETexas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductorproduct or service without notice, and advises its customers to obtain the latest version of relevant informationto verify, before placing orders, that the information being relied on is current.TI warrants performance of its semiconductor products and related s

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASEMedium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1

TIP120-TIP127 TO-220 Darlington Transistor TO-2201.BASE 2.COLLECTOR3.EMITTER 3 21FeaturesTIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP1

DIP Type TransistorsNPN Darlington TransistorsTIP120 (KIP120)TO-22010.16 0.20 3.18 0.10 2.54 0.20(0.70) Features(1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60 V Medium Power Complementary Silicon TransistorsMAX1.470.80 0.101 23#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54 0

isc Silicon NPN Darlington Power Transistor TIP120DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 4.0V(Max)@ I = 5ACComplement to Type TIP125Minimum Lot-to-Lot variations for robust deviceperformance and reliable

Order this documentMOTOROLAby TIP120/DSEMICONDUCTOR TECHNICAL DATAPlastic Medium-PowerNPNTIP120*Complementary Silicon Transistors. . . designed for generalpurpose amplifier and lowspeed switching applications.TIP121* High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdcTIP122*VCEO(sus) = 60 Vdc (Min)

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP120 TIP125TIP121 TIP126TIP122 TIP127NPN PNPTO-220Plastic PackageHigh Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION TIP120/125 TIP121/126 TIP122/127 UNITVCEO Collector Emitter Vol

TIP120 SeriesPNP/NPN Silicon Power TransistorP b Lead(Pb)-Free12 FEATURES:3* Medium Power Complementary silicon transistors 1. BASE2. COLLECTOR* TIP120,121,122 Darlington TRANSISTOR (NPN)3. EMITTER* TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220MAXIMUM RATINGS (TA=25 unless otherwise noted)TIP122TIP120 TIP121ParameterSymbolUnits TIP125 TIP126 TIP127