TIP140T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP140T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 500
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar TIP140T
TIP140T
Datasheet (PDF)
..1. Size:215K inchange semiconductor
tip140t.pdf 
isc Silicon NPN Darlington Power Transistor TIP140TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP145TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching application
8.1. Size:234K motorola
tip140re.pdf
Order this documentMOTOROLAby TIP140/DSEMICONDUCTOR TECHNICAL DATANPNTIP140Darlington ComplementaryTIP141*Silicon Power Transistors. . . designed for generalpurpose amplifier and low frequency switching applications. TIP142*PNP High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V CollectorEmitter Sustaining Voltage @ 30 mATIP145VCEO(sus) = 60
8.2. Size:68K st
tip140 tip141 tip142 tip145 tip146 tip147.pdf
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-218DESCRIPTION The TIP140, TIP141
8.3. Size:48K st
tip140 tip141 tip142 tip145 tip146 tip147 .pdf
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI
8.4. Size:321K cdil
tip140-tip147.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPNTIP145, 146, 147 PNPTO- 3PN Non IsolatedPlastic PackageDesigned for General Purpose Amplifier and Low Frequency Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNITTIP145 TIP146 TIP147C
8.5. Size:223K inchange semiconductor
tip140f.pdf
isc Silicon NPN Darlington Power Transistor TIP140FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP145FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica
8.6. Size:222K inchange semiconductor
tip140.pdf
isc Silicon NPN Darlington Power Transistor TIP140DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP145Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applicati
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