TIP145F
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP145F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 500
Paquete / Cubierta:
ISOWATT218
Búsqueda de reemplazo de transistor bipolar TIP145F
TIP145F
Datasheet (PDF)
..1. Size:59K samsung
tip145f.pdf
PNP EPITAXIALTIP145F/146F/147F DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-3PFMIN h = 1000 @ V = -4V, IC = -5AFE CEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplement to TIP140F/141F/142FABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage VCBOV: TIP145F - 60V: TIP146F - 80V: TIP147F -
8.1. Size:68K st
tip140 tip141 tip142 tip145 tip146 tip147.pdf
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-218DESCRIPTION The TIP140, TIP141
8.2. Size:48K st
tip140 tip141 tip142 tip145 tip146 tip147 .pdf
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI
8.3. Size:215K inchange semiconductor
tip145t.pdf
isc Silicon PNP Darlington Power Transistor TIP145TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type TIP140TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching appli
8.4. Size:222K inchange semiconductor
tip145.pdf
isc Silicon PNP Darlington Power Transistor TIP145DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type TIP140Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica
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