TIP146 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP146
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 500
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar TIP146
TIP146 Datasheet (PDF)
tip140 tip141 tip142 tip145 tip146 tip147.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-218DESCRIPTION The TIP140, TIP141
tip140 tip141 tip142 tip145 tip146 tip147 .pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP140/141/142TIP145/146/147COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141, TIP142, TIP145 AND TIP147 ARESTMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE 32APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-218DESCRIPTION The TI
tip146.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Darlington Power Transistor TIP146DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type TIP141Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica
tip146t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Darlington Power Transistor TIP146TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type TIP141TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching appli
tip140re.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Order this documentMOTOROLAby TIP140/DSEMICONDUCTOR TECHNICAL DATANPNTIP140Darlington ComplementaryTIP141*Silicon Power Transistors. . . designed for generalpurpose amplifier and low frequency switching applications. TIP142*PNP High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V CollectorEmitter Sustaining Voltage @ 30 mATIP145VCEO(sus) = 60
tip142t tip147t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP142TTIP147TCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAINAPPLICATIONS 32 GENERAL PURPOSE SWITCHING 1DESCRIPTION TO-220The TIP142T is a silicon epitaxial-base NPNpower transistor in monolithic Darlingtonconfiguration, mo
tip141.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP141/142TIP146/147COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP141and TIP142 are silicon epitaxial-baseNPN power transistors in monolithic Darlingtonconfiguration and are mounted in TO-218 plasticpackage. They are intented for use in powerlinear and switching applications.3The complementary PNP types are TIP146 an
tip142t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP140T/141T/142TMonolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147TTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitSymbol Parameter Val
tip147f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP145F/146F/147FMonolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140F/141F/142FTO-3PF11.Base 2.Collector 3.EmitterPNP Epitaxial Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value
tip142f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP140F/141F/142FMonolithic Construction With Built In Base-Emitter Shunt Resistors Complement to TIP145F/146F/147F High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial UseTO-3PF11.Base 2.Collector 3.EmitterNPN Epitaxial Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Uni
tip145f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PNP EPITAXIALTIP145F/146F/147F DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-3PFMIN h = 1000 @ V = -4V, IC = -5AFE CEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplement to TIP140F/141F/142FABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage VCBOV: TIP145F - 60V: TIP146F - 80V: TIP147F -
tip142t 47t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPNTIP147T PNPTO-220Plastic PackageFor use in Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 100 VEmitter Base Voltage VEBO
tip140-tip147.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140, 141, 142 NPNTIP145, 146, 147 PNPTO- 3PN Non IsolatedPlastic PackageDesigned for General Purpose Amplifier and Low Frequency Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL TIP140 TIP141 TIP142 UNITTIP145 TIP146 TIP147C
tip142t 3da142t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR : Purpose: Linear and switching industrial equipment. : - TIP147T(3CA147T) Features: Monolithic construction with built in base-emitter shunt resistorsHigh DC current gain complement to TIP147T(
tip142t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SPTECH Product SpecificationSPTECH Silicon NPN Darlington Power Transistor TIP142TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147TAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
tip147.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Darlington Power Transistor TIP147DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP142Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applic
tip142t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP142TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicatio
tip145t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Darlington Power Transistor TIP145TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type TIP140TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching appli
tip140f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP140FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP145FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica
tip145.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Darlington Power Transistor TIP145DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type TIP140Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica
tip141f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP141FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applica
tip140.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP140DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP145Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applicati
tip141.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP141DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applicati
tip142.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP142 DESCRIPTION High DC Current Gain- : hFE = 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Complement to Type TIP147 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS
tip140t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP140TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type TIP145TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching application
tip142f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP142FDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type TIP147FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applic
tip141t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Darlington Power Transistor TIP141TDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type TIP146TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching application
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .