TIP29F Todos los transistores

 

TIP29F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIP29F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar TIP29F

 

TIP29F Datasheet (PDF)

 9.1. Size:137K  motorola
tip29bre.pdf

TIP29F TIP29F

Order this documentMOTOROLAby TIP29B/DSEMICONDUCTOR TECHNICAL DATANPNTIP29BComplementary Silicon PlasticTIP29CPower TransistorsPNP. . . designed for use in general purpose amplifier and switching applications.TIP30BCompact TO220 AB package.

 9.2. Size:47K  st
tip2955-3055.pdf

TIP29F TIP29F

TIP2955TIP3055 COMPLEMENTARY SILICON POWERTRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESDESCRIPTION The TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, output3stages and hi-fi amplifiers.2The complementary PNP type is the TIP2955

 9.3. Size:87K  st
tip2955 tip3055.pdf

TIP29F TIP29F

TIP2955TIP3055Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier321DescriptionTO-247The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal sche

 9.4. Size:230K  st
tip29a tip29c.pdf

TIP29F TIP29F

TIP29ATIP29CNPN power transistors.Features NPN transistorsApplications Audio, linear and switching applications3Description21The devices are manufactured in Planar TO-220technology with Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation Figure 1. Internal schematic diagramvoltage.

 9.5. Size:51K  st
tip29a-tip29c tip30a-tip30c.pdf

TIP29F TIP29F

TIP29A/29CTIP30A/30CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP29A and TIP29C are siliconEpitaxial-Base NPN power transistors mounted inJedec TO-220 plastic package. They are intentedfor use in medium power linear and switching32applications.1The complementary PNP types ar

 9.6. Size:66K  st
tip29a-30.pdf

TIP29F TIP29F

TIP29A/29B/29CTIP30A/30B/30CCOMPLEMENTARY SILICON POWER TRANSISTORS TIP31A, TIP31C, TIP32A AND TIP32C ARESGS-THOMSON PREFERREDSALESTYPES DESCRIPTION The TIP31A, TIP31B and TIP31C are siliconepitaxial-base NPN power transistors in JedecTO-220 plastic package, intented for use inmedium power linear and switching applications.32The complementary PNP types are TIP32A,1

 9.7. Size:37K  st
tip2955.pdf

TIP29F TIP29F

TIP2955TIP3055COMPLEMENTARY SILICON POWERTRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe TIP3055 is a silicon epitaxial-base planarNPN transistor mountend in TO-218 plasticpackage and intented for power switchingcircuits, series and shunt regulators, outputstages and hi-fi amplifiers.3The complementary PNP type is the TIP2955.21TO-218INTERNAL SCHEMATI

 9.8. Size:526K  fairchild semi
tip29-a-b-c.pdf

TIP29F TIP29F

July 2008TIP29/TIP29A/TIP29B/TIP29CNPN Epitaxial Silicon TransistorFeatures Complementary to TIP30/TIP30A/TIP30B/TIP30C1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : TIP29 40 V : TIP29A 60 V : TIP29B 80 V : TIP29C 100 V VCEO Collector-Emitter Voltage : TIP29 40 V : TIP

 9.9. Size:49K  samsung
tip29.pdf

TIP29F TIP29F

TIP29 SERIES(TIP29/29A/29B/29C) NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEARTO-220SWITCHING APPLICATIONS Complementary to TIP30/30A/30B/30CABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Emitter Voltage VCBO 40 V: TIP29 60 V: TIP29A: TIP29B 80 V: TIP29C 100 V: TIP29 Collector Emitter Voltage VCEO 40 V: TIP29A 60 V: TIP29B: TI

 9.10. Size:247K  mcc
tip29-a-b-c tip30-a-b-c to-220.pdf

TIP29F TIP29F

MCCMicro Commercial ComponentsTM TIP29,A,B,C(NPN)20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311TIP30,A,B,C(PNP)Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates 1.0 AmpRoHS Compliant. See ordering information) Complementary Marking: Type Number Rth(jc) is 4.167OC/W, Rth(ja) i

 9.11. Size:83K  onsemi
tip29-a-b-c tip30-a-b-c.pdf

TIP29F TIP29F

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 AB package.http://onsemi.comFeatures1 AMPERE Pb-Free Packages are Available*POWER TRANSISTORSCOMPLEMENTARY SILICON40, 60, 80, 100 VOLTS, 80 WATTSMARKINGDIAGRAM4TO-220ABTIPxxxGCASE 2

 9.12. Size:268K  onsemi
tip29g tip29ag tip29bg tip29cg tip30g tip30ag tip30bg tip30cg.pdf

TIP29F TIP29F

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col

 9.13. Size:105K  onsemi
tip29 tip29a tip29b tip29c tip30 tip30a tip30b tip30c.pdf

TIP29F TIP29F

TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col

 9.14. Size:237K  onsemi
tip3055 tip2955.pdf

TIP29F TIP29F

TIP3055 (NPN),TIP2955 (PNP)Complementary SiliconPower TransistorsDesigned for general-purpose switching and amplifier applications.http://onsemi.comFeatures DC Current Gain - 15 AMPEREhFE = 20 - 70 @ IC POWER TRANSISTORS= 4.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTSVCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell

 9.15. Size:81K  bourns
tip2955.pdf

TIP29F TIP29F

TIP2955PNP SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)TIP3055 Series 90 W at 25C Case TemperatureB1 15 A Continuous Collector CurrentC 2 Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwi

 9.16. Size:107K  mospec
tip2955 tip3055.pdf

TIP29F TIP29F

AAA

 9.17. Size:145K  mospec
tip29 tip30.pdf

TIP29F TIP29F

AAA

 9.18. Size:311K  cdil
tip29 tip30 a b c.pdf

TIP29F TIP29F

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP29, A, B, C NPNTIP30, A, B, C PNPTO-220Plastic PackageComplementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi AmplifiersABSOLUTE MAXIMUM RATINGS (Ta=25

 9.19. Size:290K  cdil
tip2955f tip3055f.pdf

TIP29F TIP29F

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPOWER TRANSISTORS TIP2955F PNPTIP3055F NPNTO- 3P Fully IsolatedPlastic PackageBCEDesigned for General Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector-Emitter Voltage VCEO 60 VCollector-Emitter Voltage VCER 70 VCollector-

 9.20. Size:959K  jsmsemi
tip2955.pdf

TIP29F TIP29F

TIP2955Silicon PNP Power TransistorsDESCRIPTION With TO-247 package Complement to type TIP3055 90 W at 25C case temperature 15 A continuous collector current APPLICATIONS Designed for generalpurpose switching and amplifier applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol

 9.21. Size:209K  inchange semiconductor
tip29c.pdf

TIP29F TIP29F

isc Silicon NPN Power Transistors TIP29CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingap

 9.22. Size:209K  inchange semiconductor
tip29.pdf

TIP29F TIP29F

isc Silicon NPN Power Transistors TIP29DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingappli

 9.23. Size:209K  inchange semiconductor
tip29a.pdf

TIP29F TIP29F

isc Silicon NPN Power Transistors TIP29ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapp

 9.24. Size:217K  inchange semiconductor
tip2955t.pdf

TIP29F TIP29F

isc Silicon PNP Power Transistor TIP2955TDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 0.8V(Max)@ I = 4ACE(sat CComplement to Type TIP2955TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifier

 9.25. Size:209K  inchange semiconductor
tip29b.pdf

TIP29F TIP29F

isc Silicon NPN Power Transistors TIP29BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapp

 9.26. Size:221K  inchange semiconductor
tip2955.pdf

TIP29F TIP29F

isc Silicon PNP Power Transistor TIP2955DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1 V(Max)@ I = -4ACE(sat CComplement to Type TIP3055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifi

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top

 


TIP29F
  TIP29F
  TIP29F
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: C4977 | BP4N45S | BP4N38S | BP18N98S | BP15N98T | BM8N08A | BM3P03A | BM1P40A | BM05P06B | BM05P06A | BM05N06B | BM03P05 | BM03N05 | BL15P15A | BL15N15A | BL10P15A | BL10N15A | BA16P25A | BA16N25A | BA15P26B | BA15P26A

 

 

 
Back to Top