TIP3054 Datasheet. Equivalente

 8.1. Size:104K  motorola
 tip3055r.pdf

 8.2. Size:87K  st
 tip2955 tip3055.pdf

TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal sche

 8.3. Size:237K  onsemi
 tip3055 tip2955.pdf

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http //onsemi.com Features DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell

 8.4. Size:82K  bourns
 tip3055.pdf

TIP3055 NPN SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE TIP2955 Series (TOP VIEW) 90 W at 25 C Case Temperature B 1 15 A Continuous Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temperature (unless otherwis

 8.5. Size:107K  mospec
 tip2955 tip3055.pdf

A A A

 8.6. Size:290K  cdil
 tip2955f tip3055f.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-

 8.7. Size:1156K  jsmsemi
 tip3055.pdf

TIP3055 Silicon NPN Power Transistors DESCRIPTION With TO-247 package Complement to type TIP2955 90 W at 25 C case temperature 15 A continuous collector current APPLICATIONS Designed for general purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol

 8.8. Size:192K  inchange semiconductor
 tip3055.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor TIP3055 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Complement to Type TIP2955 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose

 8.9. Size:214K  inchange semiconductor
 tip3055t.pdf

isc Silicon NPN Power Transistor TIP3055T DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 4A CE(sat C Complement to Type TIP2955T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier