TIP30C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP30C 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO220
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TIP30C datasheet
..1. Size:527K fairchild semi
tip30 tip30a tip30b tip30c.pdf 
July 2008 TIP30/TIP30A/TIP30B/TIP30C PNP Epitaxial Silicon Transistor Features Complementary to TIP29/TIP29A/TIP29B/TIP29C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage TIP30 - 40 V TIP30A - 60 V TIP30B - 80 V TIP30C - 100 V VCEO Collector-Emitter Voltage TIP30 - 40
..2. Size:105K onsemi
tip29 tip29a tip29b tip29c tip30 tip30a tip30b tip30c.pdf
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. www.onsemi.com Features 1 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col
..3. Size:119K inchange semiconductor
tip30 tip30a tip30b tip30c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP30/30A/30B/30C DESCRIPTION With TO-220C package Complement to type TIP29/29A/29B/29C APPLICATIONS For use in general purpose power amplifer and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 )
..4. Size:212K inchange semiconductor
tip30c.pdf
isc Silicon PNP Power Transistors TIP30C DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = -0.7V(Max.)@I = -1.0A CE(sat) C Complement to Type TIP29C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching
0.1. Size:51K st
tip29a-tip29c tip30a-tip30c.pdf
TIP29A/29C TIP30A/30C COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP29A and TIP29C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching 3 2 applications. 1 The complementary PNP types ar
0.2. Size:268K onsemi
tip29g tip29ag tip29bg tip29cg tip30g tip30ag tip30bg tip30cg.pdf
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. www.onsemi.com Features 1 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS COMPLEMENTARY SILICON Rating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col
9.2. Size:87K st
tip2955 tip3055.pdf
TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal sche
9.3. Size:49K samsung
tip30.pdf
TIP30 SERIES (TIP30/30A/30B/30C) PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complement to TIP29/29A/29B/29C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage TIP30 VCBO - 40 V TIP30A - 60 V TIP30B - 80 V TIP30C - 100 V Collector Emitter Voltage TIP30 VCEO - 40 V TIP30A - 60 V TIP30B
9.4. Size:66K central
tip30-a-b-c.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.5. Size:247K mcc
tip29-a-b-c tip30-a-b-c to-220.pdf
MCC Micro Commercial Components TM TIP29,A,B,C(NPN) 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 TIP30,A,B,C(PNP) Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates 1.0 Amp RoHS Compliant. See ordering information) Complementary Marking Type Number Rth(jc) is 4.167OC/W, Rth(ja) i
9.6. Size:83K onsemi
tip29-a-b-c tip30-a-b-c.pdf
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 AB package. http //onsemi.com Features 1 AMPERE Pb-Free Packages are Available* POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS MARKING DIAGRAM 4 TO-220AB TIPxxxG CASE 2
9.7. Size:237K onsemi
tip3055 tip2955.pdf
TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http //onsemi.com Features DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell
9.8. Size:82K bourns
tip3055.pdf
TIP3055 NPN SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE TIP2955 Series (TOP VIEW) 90 W at 25 C Case Temperature B 1 15 A Continuous Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temperature (unless otherwis
9.11. Size:311K cdil
tip29 tip30 a b c.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25
9.12. Size:290K cdil
tip2955f tip3055f.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-
9.13. Size:1156K jsmsemi
tip3055.pdf
TIP3055 Silicon NPN Power Transistors DESCRIPTION With TO-247 package Complement to type TIP2955 90 W at 25 C case temperature 15 A continuous collector current APPLICATIONS Designed for general purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol
9.14. Size:192K inchange semiconductor
tip3055.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor TIP3055 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Complement to Type TIP2955 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose
9.15. Size:212K inchange semiconductor
tip30a.pdf
isc Silicon PNP Power Transistors TIP30A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = -0.7V(Max.)@I = -1.0A CE(sat) C Complement to Type TIP29A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching
9.16. Size:214K inchange semiconductor
tip3055t.pdf
isc Silicon NPN Power Transistor TIP3055T DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 4A CE(sat C Complement to Type TIP2955T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier
9.17. Size:212K inchange semiconductor
tip30.pdf
isc Silicon PNP Power Transistors TIP30 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = -0.7V(Max.)@I = -1.0A CE(sat) C Complement to Type TIP29 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching ap
9.18. Size:213K inchange semiconductor
tip30b.pdf
isc Silicon PNP Power Transistors TIP30B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = -0.7V(Max.)@I = -1.0A CE(sat) C Complement to Type TIP29B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching
Otros transistores... TIP29D, TIP29E, TIP29F, TIP30, TIP3054, TIP3055, TIP30A, TIP30B, 9014, TIP30D, TIP30E, TIP30F, TIP31, TIP31A, TIP31B, TIP31C, TIP31D
