TIP31D Todos los transistores

 ..1. Size:210K  inchange semiconductor
 tip31d.pdf

isc Silicon NPN Power Transistors TIP31D DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR) CEO Complement to Type TIP32D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATI

 9.1. Size:196K  motorola
 tip31are.pdf

Order this document MOTOROLA by TIP31A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP31A Complementary Silicon Plastic TIP31B* Power Transistors TIP31C* . . . designed for use in general purpose amplifier and switching applications. PNP Collector Emitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc TIP32A Collector Emitter Sustaining Voltage VCEO(sus) =

 9.2. Size:136K  st
 tip31c.pdf

TIP31C Power transistors General features New enhanced series High switching speed hFE improved linearity hFE Grouping 3 2 Applications 1 Linear and switching industrial application TO-220 Description The TIP31C is a base island technology NPN power transistor in TO-220 plastic package with Internal schematic diagram better performances than the industry s

 9.3. Size:75K  st
 tip31-32.pdf

TIP31A/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The TIP31A and TIP31C are silicon epitaxial-base NPN transistors in Jedec TO-220 TO-220 plastic package, intented for use in medium power linear and switching applications. TIP32B is PNP power transistor.The

 9.4. Size:135K  st
 tip31a.pdf

TIP31A Power transistors General features New enhanced series High switching speed hFE improved linearity Applications 3 2 1 Linear and switching industrial application TO-220 Description The TIP31A is a base island technology NPN power transistor in TO-220 plastic package with better performances than the industry standard TIP31A that make this device suitabl

 9.5. Size:67K  st
 tip31a tip31c tip32a tip32b tip32c.pdf

TIP31A/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented 3 for use in medium power linear and switching 2 1 applications. The complementary PNP types are TIP32A and TO-220 TI

 9.6. Size:136K  st
 tip31c-r tip31c-o tip31c-y.pdf

TIP31C Power transistors General features New enhanced series High switching speed hFE improved linearity hFE Grouping 3 2 Applications 1 Linear and switching industrial application TO-220 Description The TIP31C is a base island technology NPN power transistor in TO-220 plastic package with Internal schematic diagram better performances than the industry s

 9.7. Size:39K  st
 tip31.pdf

TIP31A/31B/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS n TIP31A, TIP31C, TIP32A,TIP32B, AND TIP32C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP31A, TIP31B and TIP31C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 2 The complementary PNP types are TIP3

 9.8. Size:39K  fairchild semi
 tip31abc.pdf

TIP31 Series(TIP31/31A/31B/31C) Medium Power Linear Switching Applications Complementary to TIP32/32A/32B/32C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage TIP31 40 V TIP31A 60 V TIP31B 80 V TIP31C 100 V VCEO Collector-Emitter V

 9.9. Size:526K  fairchild semi
 tip31 tip31a tip31b tip31c.pdf

July 2008 TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features Complementary to TIP32/TIP32A/TIP32B/TIP32C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage TIP31 40 V TIP31A 60 V TIP31B 80 V TIP31C 100 V VCEO Collector-Emitter Voltage TIP31 40 V TIP

 9.10. Size:131K  mcc
 tip31-a-b-c-to220.pdf

MCC TM Micro Commercial Components TIP31/A/B/C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features TO-220 package Silicon NPN The complementary PNP types are the TIP32 respectively Case Material Molded Plastic. ULFlammability Power Transistors Classification Rating 94V-0 Marking Part Number

 9.11. Size:256K  mcc
 tip31 tip31a tip31b tip31c to-220.pdf

MCC TM Micro Commercial Components TIP31/31A/31B/31C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN The complementary PNP types are the TIP32 respectively Epoxy meets UL 94 V-0

 9.12. Size:126K  onsemi
 tip31-a-b-c tip32-a-b-c.pdf

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistors Designed for use in general purpose amplifier and switching 3 AMPERE applications. POWER TRANSISTORS Features Collector-Emitter Saturation Voltage - COMPLEMENTARY SILICON VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc 40-60-80-100 VOLTS, Co

 9.13. Size:227K  onsemi
 tip31g tip31ag tip31bg tip31cg tip32g tip32ag tip32bg tip32cg.pdf

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) Complementary Silicon www.onsemi.com Plastic Power Transistors 3 AMPERE Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 40-60-80-100 VOLTS, High Current Gain - Bandwidth Product 40 WATTS Compact TO-220 Package Th

 9.14. Size:164K  utc
 tip31c.pdf

UNISONIC TECHNOLOGIES CO., LTD TIP31C NPN EXPITAXIAL TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP32C. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

 9.15. Size:85K  bourns
 tip31-a-b-c.pdf

TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP32 Series TO-220 PACKAGE (TOP VIEW) 40 W at 25 C Case Temperature 3 A Continuous Collector Current B 1 5 A Peak Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum

 9.16. Size:89K  secos
 tip31.pdf

TIP31 / TIP31A / TIP31B / TIP31C NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-220J Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise specified) Ratings Parameter Symbol Unit TIP31 TIP31A TIP31B TIP31C Collector - Base Volta

 9.17. Size:316K  cdil
 tip31 tip32.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP31, A, B, C NPN TIP32, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25

 9.18. Size:600K  jiangsu
 tip31c.pdf

 9.19. Size:68K  kec
 tip31c.pdf

SEMICONDUCTOR TIP31C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP32C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D 3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 L H 5.60 MAX VCBO Collector-Base Voltage 100 V C C J 1.37 MAX K 0.50

 9.20. Size:436K  kec
 tip31cf.pdf

SEMICONDUCTOR TIP31CF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S _ Complementary to TIP32CF. A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) 0.5+0.1/-0.05 H _ + J 13.6 0.5 L L R K _ 3.7 0.2 CHARACTERISTIC SYMBOL RA

 9.21. Size:204K  lge
 tip31 tip31a tip31b tip31c.pdf

TIP31/31A/31B/31C TO-220 Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP31 TIP31A TIP31B TIP31C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V

 9.22. Size:630K  jilin sino
 tip31c.pdf

NPN NPN Epitaxial Silicon Transistor R TIP31C APPLICATIONS Medium Power Linear Switching Applications FEATURES V =100V (min) High collector voltage V =100V (min) CEO CEO TIP32C Complementary to TIP32C RoHS RoHS prod

 9.23. Size:310K  cystek
 tip31cj3.pdf

Spec. No. C609J3 Issued Date 2014.06.06 CYStech Electronics Corp. Revised Date Page No. 1/6 3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Description TIP31CJ3 is designed for use in general purpose amplifier and switching applications. Features Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A High collector-emitter sustaining volta

 9.24. Size:149K  cystek
 tip31ce3.pdf

Spec. No. C609E3 Issued Date 2003.09.04 CYStech Electronics Corp. Revised Date Page No. 1/4 3A NPN Epitaxial Planar Power Transistor TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. Features Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A High collector-emitter sustaining vo

 9.25. Size:530K  semtech
 sttip31c.pdf

ST TIP31C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector Current (Pulse) ICP 5 A Base Current IB 1 A O Power Diss

 9.26. Size:377K  first silicon
 tip31.pdf

SEMICONDUCTOR TIP31 TECHNICAL DATA TRANSISTOR (NPN) TIP31/31A/31B/31C A O C F E FEATURES B DIM MILLIMETERS Medium Power Linear Switching Applications A 10.15 0.15 B 15.30 MAX C 1.3+0.1/-0.15 P D 0.8 0.1 E 3.8 0.2 F 2.7 0.2 J H 0.4 0.15 D J 13.6 0.2 N 2.54 0.2 H N N MAXIMUM RATINGS (Ta=25 unless otherwise noted) O 4.5 0.2 1 2 3 P 2

 9.27. Size:278K  feihonltd
 tip31ca.pdf

TRANSISTOR TIP31CA MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 70V High switching speed VCBO 100V RoHS RoHS product PC 30W APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency powe

 9.28. Size:443K  cn evvo
 tip31c.pdf

TIP31C Silicon NPN Epitaxial Transistor TIP31C TIP31C, the base island technology NPN power transistor, make this device suitable for audio,power linear and switching applications.The complementary PNP type is TIP32C Features Complementary PNP-NPN devices h grouping FE h improved linearity FE RoHS product Applications General purpose circuits Audio amplifi

 9.29. Size:231K  inchange semiconductor
 tip31f.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31F DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- V(BR) CEO= 160V(Min) Complement to Type TIP32F APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER

 9.30. Size:149K  inchange semiconductor
 tip31 tip31a tip31b tip31c.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION With TO-220C package Complement to type TIP32/32A/32B/32C APPLICATIONS Medium power linear switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO

 9.31. Size:231K  inchange semiconductor
 tip31e.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP31E DESCRIPTION DC Current Gain -hFE = 25(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- V(BR) CEO= 140V(Min) Complement to Type TIP32E APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER