TIP33D Todos los transistores

 9.1. Size:105K  motorola
 tip33bre.pdf

Order this document MOTOROLA by TIP33B/D SEMICONDUCTOR TECHNICAL DATA NPN * TIP33B Complementary Silicon TIP33C PNP High-Power Transistors TIP34B* . . . for general purpose power amplifier and switching applications. 10 A Collector Current Low Leakage Current ICEO = 0.7 mA @ 60 V TIP34C Excellent dc Gain hFE = 40 Typ @ 3.0 A

 9.2. Size:38K  st
 tip33.pdf

TIP33C TIP34C COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP33C is a silicon epitaxial-base NPN power transistors in TO-218 plastic package, intented for use in linear and switching applications. The complementary PNP types is TIP34C. 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN

 9.3. Size:108K  st
 tip33c tip34c.pdf

TIP33C TIP34C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Figure 1. Internal schematic diagrams Table 1.

 9.4. Size:48K  st
 tip33c tip34c .pdf

TIP33C TIP34C COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION 3 The TIP33C is a silicon Epitaxial-Base NPN 2 power transistor mounted in TO-218 plastic 1 package. It is intented for use in linear and switching applications. TO-218 The complementary PNP t

 9.5. Size:51K  onsemi
 tip33a tip33c.pdf

TIP33A, TIP33C NPN High-Power Transistors Designed for general-purpose power amplifier and switching applications. Features ESD Ratings Machine Model, C; > 400 V http //onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 in 10 AMPERE Pb-Free Packages are Available* NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM RATINGS Rating Symbol

 9.6. Size:184K  onsemi
 tip33c.pdf

DATA SHEET www.onsemi.com NPN High-Power Transistors TIP33C Designed for general-purpose power amplifier and switching applications. TO-247 CASE 340L Features STYLE 3 ESD Ratings Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 10 AMPERE Epoxy Meets UL 94 V-0 @ 0.125 in NPN SILICON These Devices is Pb-Free* POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS MAXIMUM R

 9.7. Size:84K  bourns
 tip33-a-b-c.pdf

TIP33, TIP33A, TIP33B, TIP33C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP34 Series 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current C 2 15 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max

 9.8. Size:144K  mospec
 tip33 tip34.pdf

A A A

 9.9. Size:332K  cdil
 tip33p tip34.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH POWER TRANSISTORS TIP33, A, B, C NPN TIP34, A, B, C PNP TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP33 TIP33A TIP33B TIP33C DESCRIPTION SYMBOL UNIT TIP34 TIP34A TIP34B TIP34C Collector Emitter Voltage V

 9.10. Size:281K  cdil
 tip33 tip34f.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS TIP33F, 33AF, 33BF, 33CF TIP 34F,34AF, 34BF, 34CF TO -3P Plastic Package B C E Complementary TIP34F, 34AF, 34BF, 34CF General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise ) DESCRIPTION SYMBOL 33F 33AF 33

 9.11. Size:313K  kec
 tip33c.pdf

SEMICONDUCTOR TIP33C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Complementary to TIP34C. Recommended for 45W 50W Audio Frequency DIM MILLIMETERS A 15.9 MAX Amplifier Output Stage. B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d MAXIMUM RATING (Ta=25 ) H 9.0 I 4.5 CHARACTERISTIC SY

 9.12. Size:120K  inchange semiconductor
 tip33 tip33a tip33b tip33c.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP33/33A/33B/33C DESCRIPTION With TO-3PN package Complement to type TIP34/34A/34B/34C DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

 9.13. Size:219K  inchange semiconductor
 tip33c.pdf

isc Silicon NPN Power Transistor TIP33C DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP34C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXI

 9.14. Size:219K  inchange semiconductor
 tip33b.pdf

isc Silicon NPN Power Transistor TIP33B DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Complement to Type TIP34B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM

 9.15. Size:219K  inchange semiconductor
 tip33a.pdf

isc Silicon NPN Power Transistor TIP33A DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Complement to Type TIP34A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIM

 9.16. Size:219K  inchange semiconductor
 tip33.pdf

isc Silicon NPN Power Transistor TIP33 DESCRIPTION DC Current Gain- h = 40(Min)@I = 1A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Complement to Type TIP34 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM