TIP34D Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP34D
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO218
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TIP34D datasheet
tip33c tip34c.pdf
TIP33C TIP34C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Figure 1. Internal schematic diagrams Table 1.
tip33c tip34c .pdf
TIP33C TIP34C COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS GENERAL PURPOSE SWITCHING DESCRIPTION 3 The TIP33C is a silicon Epitaxial-Base NPN 2 power transistor mounted in TO-218 plastic 1 package. It is intented for use in linear and switching applications. TO-218 The complementary PNP t
tip34-a-b-c.pdf
TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE TIP33 Series (TOP VIEW) 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current C 2 15 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maxi
Otros transistores... TIP33C , TIP33D , TIP33E , TIP33F , TIP34 , TIP34A , TIP34B , TIP34C , TIP2955 , TIP34E , TIP34F , TIP35 , TIP35A , TIP35B , TIP35C , TIP35D , TIP35E .
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