TIP36C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DI

TIP35C TIP36C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excep

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C. INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

SEMICONDUCTOR TIP36C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP35C. A 15.9 MAX B 4.8 MAX Icmax -25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0

PNP PNP Epitaxial Silicon Transistor R TIP36C APPLICATIONS Audio amplifier General purpose FEATURES V =100V (min) High collector voltage V =100V (min) CEO CEO Low collector-emitter saturation voltage TIP35C Complementa

SPTECH Product Specification SPTECH Silicon PNP Power Transistor TIP36C DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applicati

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION With TO-3PN package Complement to type TIP35/35A/35B/35C DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

TIP35CP TIP36CP Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN-PNP transistors Applications General purpose 3 Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excepti

TIP35CW TIP36CW Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exc

SEMICONDUCTOR TIP36CA TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP35CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax -25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50

TIP36CT4TL Silicon PNP Power Transistor DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (

isc Silicon PNP Power Transistor TIP36CF DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35CF Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in