TIP36D Todos los transistores

 ..1. Size:221K  inchange semiconductor
 tip36d.pdf

isc Silicon PNP Power Transistor TIP36D DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) Complement to Type TIP35D Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ge

 9.1. Size:192K  st
 tip35cp tip36cp.pdf

TIP35CP TIP36CP Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN-PNP transistors Applications General purpose 3 Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excepti

 9.2. Size:43K  st
 tip35c tip36c tip36b.pdf

TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DI

 9.3. Size:190K  st
 tip35cw tip36cw.pdf

TIP35CW TIP36CW Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exc

 9.4. Size:190K  st
 tip35c tip36c.pdf

TIP35C TIP36C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excep

 9.5. Size:260K  onsemi
 tip35a tip35b tip35c tip36a tip36b tip36c.pdf

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

 9.6. Size:170K  utc
 tip36c.pdf

UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C. INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

 9.7. Size:86K  bourns
 tip36-a-b-c.pdf

TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP35 Series 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma

 9.8. Size:154K  mospec
 tip35 tip36.pdf

A A A

 9.9. Size:67K  cdil
 tip35f tip36.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CF DESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CF VCEO

 9.10. Size:289K  kec
 tip36c.pdf

SEMICONDUCTOR TIP36C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP35C. A 15.9 MAX B 4.8 MAX Icmax -25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0

 9.11. Size:440K  kec
 tip36ca.pdf

SEMICONDUCTOR TIP36CA TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP35CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax -25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50

 9.12. Size:523K  jilin sino
 tip36c.pdf

PNP PNP Epitaxial Silicon Transistor R TIP36C APPLICATIONS Audio amplifier General purpose FEATURES V =100V (min) High collector voltage V =100V (min) CEO CEO Low collector-emitter saturation voltage TIP35C Complementa

 9.13. Size:1295K  cn sps
 tip36ct4tl.pdf

TIP36CT4TL Silicon PNP Power Transistor DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (

 9.14. Size:425K  cn sptech
 tip36c.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor TIP36C DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applicati

 9.15. Size:221K  inchange semiconductor
 tip36b.pdf

isc Silicon PNP Power Transistor TIP36B DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type TIP35B Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gen

 9.16. Size:215K  inchange semiconductor
 tip36ab.pdf

isc Silicon PNP Power Transistor TIP36AB DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

 9.17. Size:141K  inchange semiconductor
 tip36 tip36a tip36b tip36c.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION With TO-3PN package Complement to type TIP35/35A/35B/35C DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

 9.18. Size:223K  inchange semiconductor
 tip36cf.pdf

isc Silicon PNP Power Transistor TIP36CF DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35CF Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in

 9.19. Size:225K  inchange semiconductor
 tip36af.pdf

isc Silicon PNP Power Transistor TIP36AF DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

 9.20. Size:221K  inchange semiconductor
 tip36e.pdf

isc Silicon PNP Power Transistor TIP36E DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -140V(Min) CEO(SUS) Complement to Type TIP35E Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ge

 9.21. Size:216K  inchange semiconductor
 tip36at.pdf

isc Silicon PNP Power Transistor TIP36AT DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

 9.22. Size:221K  inchange semiconductor
 tip36a.pdf

isc Silicon PNP Power Transistor TIP36A DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type TIP35A Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gen

 9.23. Size:134K  inchange semiconductor
 tip36f.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36F DESCRIPTION DC Current Gain- hFE= 25(Min)@IC = -1.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)= -160V(Min) Complement to Type TIP35F Current Gain-Bandwidth Product- fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS Designed for use in general purpose power amplifier and swi