TIP36F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor TIP36F DESCRIPTION DC Current Gain- hFE= 25(Min)@IC = -1.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)= -160V(Min) Complement to Type TIP35F Current Gain-Bandwidth Product- fT= 3.0MHz(Min)@IC= -1.0A APPLICATIONS Designed for use in general purpose power amplifier and swi

TIP35CP TIP36CP Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN-PNP transistors Applications General purpose 3 Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excepti

TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DI

TIP35CW TIP36CW Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exc

TIP35C TIP36C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excep

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C. INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) TIP35 Series 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CF DESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CF VCEO

SEMICONDUCTOR TIP36C TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP35C. A 15.9 MAX B 4.8 MAX Icmax -25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0

SEMICONDUCTOR TIP36CA TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP35CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax -25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50

PNP PNP Epitaxial Silicon Transistor R TIP36C APPLICATIONS Audio amplifier General purpose FEATURES V =100V (min) High collector voltage V =100V (min) CEO CEO Low collector-emitter saturation voltage TIP35C Complementa

TIP36CT4TL Silicon PNP Power Transistor DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (

SPTECH Product Specification SPTECH Silicon PNP Power Transistor TIP36C DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applicati

isc Silicon PNP Power Transistor TIP36B DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Complement to Type TIP35B Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gen

isc Silicon PNP Power Transistor TIP36AB DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION With TO-3PN package Complement to type TIP35/35A/35B/35C DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

isc Silicon PNP Power Transistor TIP36D DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) Complement to Type TIP35D Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ge

isc Silicon PNP Power Transistor TIP36CF DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35CF Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in

isc Silicon PNP Power Transistor TIP36AF DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

isc Silicon PNP Power Transistor TIP36E DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -140V(Min) CEO(SUS) Complement to Type TIP35E Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ge

isc Silicon PNP Power Transistor TIP36AT DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

isc Silicon PNP Power Transistor TIP36A DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type TIP35A Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gen