2N5293
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5293
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 36
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 75
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.8
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2N5293
2N5293
Datasheet (PDF)
..1. Size:106K jmnic
2n5293 2n5295 2n5297.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA
..2. Size:61K inchange semiconductor
2n5293 2n5295 2n5297.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO
9.1. Size:71K central
2n5294 2n5296 2n5298.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.2. Size:343K cdil
2n5294 96 98.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N5294, 2N5296, 2N52982N5294, 5296, 5298 NPN PLASTIC POWER TRANSISTORSMedium Power Switching and Amplifier ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E
9.3. Size:127K jmnic
2n5294 2n5296 2n5298.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2N5294 2N5296 2N5298 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL
9.4. Size:58K inchange semiconductor
2n5298.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5298 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0.15A Wide Area of Safe Operation APPLICATIONS Designed for medium power switching amplifier applications. ABSOLUTE MAXIMUM RATING
9.5. Size:121K inchange semiconductor
2n5294 2n5296 2n5298.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5294 2N5296 2N5298 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO
9.6. Size:187K inchange semiconductor
2n5297.pdf
isc Silicon NPN Power Transistor 2N5297DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 1.5A, I = 0.15ACE(sat) C BWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power
Otros transistores... 2N5286
, 2N5287
, 2N5288
, 2N5289
, 2N529
, 2N5290
, 2N5291
, 2N5292
, C5198
, 2N5294
, 2N5295
, 2N5296
, 2N5297
, 2N5298
, 2N53
, 2N530
, 2N5301
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