2N5296 Todos los transistores

 ..1. Size:71K  central
 2n5294 2n5296 2n5298.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 ..2. Size:127K  jmnic
 2n5294 2n5296 2n5298.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5294 2N5296 2N5298 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL

 ..3. Size:121K  inchange semiconductor
 2n5294 2n5296 2n5298.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5294 2N5296 2N5298 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO

 9.1. Size:343K  cdil
 2n5294 96 98.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N5294, 2N5296, 2N5298 2N5294, 5296, 5298 NPN PLASTIC POWER TRANSISTORS Medium Power Switching and Amplifier Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E

 9.2. Size:106K  jmnic
 2n5293 2n5295 2n5297.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA

 9.3. Size:58K  inchange semiconductor
 2n5298.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5298 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 60V(Min) Collector-Emitter Saturation Voltage- VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0.15A Wide Area of Safe Operation APPLICATIONS Designed for medium power switching amplifier applications. ABSOLUTE MAXIMUM RATING

 9.4. Size:61K  inchange semiconductor
 2n5293 2n5295 2n5297.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO

 9.5. Size:187K  inchange semiconductor
 2n5297.pdf

isc Silicon NPN Power Transistor 2N5297 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 1.5A, I = 0.15A CE(sat) C B Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power