2N530 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N530  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 15 V

Corriente del colector DC máxima (Ic): 0.025 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Capacitancia de salida (Cc): 28 pF

Ganancia de corriente contínua (hFE): 23

Encapsulados: TO5

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2N530 datasheet

 0.1. Size:251K  motorola
 2n5301 2n5302 2n5303.pdf pdf_icon

2N530

Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silicon 2N5303 Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE High Collector Emitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) NPN SILICON Low Collector Emitter Saturatio

 0.2. Size:56K  fairchild semi
 2n5306.pdf pdf_icon

2N530

2N5306 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Bas

 0.3. Size:56K  fairchild semi
 2n5308.pdf pdf_icon

2N530

2N5308 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Bas

 0.4. Size:57K  fairchild semi
 2n5307.pdf pdf_icon

2N530

2N5307 NPN General Purpose Amplifier This device designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from Process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emit

MOSTRAR MÁS

Otros transistores... 2N5292, 2N5293, 2N5294, 2N5295, 2N5296, 2N5297, 2N5298, 2N53, BC557, 2N5301, 2N5302, 2N5303, 2N5304, 2N5305, 2N5306, 2N5306A, 2N5307