TK23 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR FTK2341E TECHNICAL DATA DESCRIPTION The FTK2341E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. GENERAL FEATURES VDS = -20V,ID =-4A Schematic diagram RDS(ON)

SEMICONDUCTOR FTK2306A TECHNICAL DATA N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 47m @10V 30V 3.16A 65m @4.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source

SEMICONDUCTOR FTK2304 TECHNICAL DATA D DESCRIPTION The FTK2304 uses advanced trench technology to G provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D VDS = 30V ,ID = 3.3A 3 RDS(ON)

SEMICONDUCTOR FTK2302 TECHNICAL DATA 20V N-Channel Enhancement-Mode MOSFET D DESCRIPTION The FTK2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,I

SEMICONDUCTOR FTK2310 TECHNICAL DATA FTK2310 N-Channel MOSFET D G DESCRIPTION The FTK2310 uses advanced trench technology to provide excellent S Schematic diagram RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. D 3 This device is suitable for use as a battery protection or in other switching S10 application. G 1 2 S Marking and pin Assignment F

SEMICONDUCTOR FTK2312 TECHNICAL DATA D DESCRIPTION The FTK2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES D VDS = 20V,ID = 4.5A 3 RDS(ON)

SEMICONDUCTOR FTK2324 TECHNICAL DATA N-Channel MOSFET SOT-23 ID V(BR)DSS RDS(on)MAX 234m @10V 100V 267m @ 6V 2A 1. GATE 278m @4.5V 2. SOURCE 3. DRA N FEATURE APPLICATION TrenchFET Power MOSFET DC/DC Converters Low RDS(ON) Load Switch Surface Mount Package LED Backlighting in LCD TVs MARKING Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25 unless

SEMICONDUCTOR FTK2333 TECHNICAL DATA P-channel MOSFET DESCRIPTION D The FTK2333 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as G a load switch applications. S GENERAL FEATURES Schematic diagram ID V(BR)DSS RDS(on) MAX 28m @ -4.5V 32m @-3.7V S33 -6A 4

SEMICONDUCTOR FTK2306 TECHNICAL DATA D DESCRIPTION The FTK2306 uses advanced trench technology to provide excellent RDS(ON), G low gate charge and operation with gate voltages as low as 2.5V. S Schematic diagram GENERAL FEATURES D VDS = 30V,ID = 5A 3 RDS(ON)

SEMICONDUCTOR FTK2301 TECHNICAL DATA 20V P-Channel Enhancement-Mode MOSFET 3 Features Low on-resistance 2 R =4.5V, I =2.8A ) = 100m DS(ON) (VGS ds 1 R =2.5V, I =2.0A ) = 150m DS(ON) (VGS ds SOT 23 (TO 236AB) High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 3 D We declare that