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2N5304 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5304
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO61
 

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2N5304 Datasheet (PDF)

 9.1. Size:251K  motorola
2n5301 2n5302 2n5303.pdf pdf_icon

2N5304

Order this documentMOTOROLAby 2N5301/DSEMICONDUCTOR TECHNICAL DATA2N53012N5302High-Power NPN Silicon2N5303Transistors. . . for use in power amplifier and switching circuits applications.20 AND 30 AMPERE High CollectorEmitter Sustaining Voltage POWER TRANSISTORSVCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)NPN SILICON Low CollectorEmitter Saturatio

 9.2. Size:56K  fairchild semi
2n5306.pdf pdf_icon

2N5304

2N5306NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Bas

 9.3. Size:56K  fairchild semi
2n5308.pdf pdf_icon

2N5304

2N5308NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Bas

 9.4. Size:57K  fairchild semi
2n5307.pdf pdf_icon

2N5304

2N5307NPN General Purpose Amplifier This device designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from Process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emit

Otros transistores... 2N5296 , 2N5297 , 2N5298 , 2N53 , 2N530 , 2N5301 , 2N5302 , 2N5303 , 2SD718 , 2N5305 , 2N5306 , 2N5306A , 2N5307 , 2N5308 , 2N5308A , 2N5309 , 2N531 .

History: 2SA1538E | 2SA1538D

 

 
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