2N5304 Todos los transistores

 

2N5304 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5304

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO61

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2N5304 datasheet

 9.1. Size:251K  motorola
 2n5301 2n5302 2n5303.pdf pdf_icon

2N5304

Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silicon 2N5303 Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE High Collector Emitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) NPN SILICON Low Collector Emitter Saturatio

 9.2. Size:56K  fairchild semi
 2n5306.pdf pdf_icon

2N5304

2N5306 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Bas

 9.3. Size:56K  fairchild semi
 2n5308.pdf pdf_icon

2N5304

2N5308 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Bas

 9.4. Size:57K  fairchild semi
 2n5307.pdf pdf_icon

2N5304

2N5307 NPN General Purpose Amplifier This device designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from Process 05. See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emit

MOSTRAR MÁS

Otros transistores... 2N5296 , 2N5297 , 2N5298 , 2N53 , 2N530 , 2N5301 , 2N5302 , 2N5303 , BD140 , 2N5305 , 2N5306 , 2N5306A , 2N5307 , 2N5308 , 2N5308A , 2N5309 , 2N531 .

History: BC858BWT1 | 2N5686

 

 

 

 

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